丝印代码：MJD148；45 V, 4 A NPN high power bipolar transistor

1. General description NPN high power bipolar transistor in a power DPAK, TO-252 (SOT428C) Surface-Mounted Device (SMD) plastic package. 2. Features and benefits • High thermal power dissipation capability • High energy efficiency due to less heat generation • Electrically similar to popul

Silicon NPN Power Transistor

DESCRIPTION · Collector-Emitter Breakdown Voltage -V(BR)CEO= 45V(Min) · Collector-Emitter Saturation Voltage -VCE(sat):= 0.5V(Max) @IC= 2A APPLICATIONS · Designed for use in general purpose amplifer and low Speed switching applications

45 V, 4 A NPN high power bipolar transistor

NPN high power bipolar transistor in a power DPAK, TO-252 (SOT428C) Surface-Mounted Device (SMD) plastic package. • High thermal power dissipation capability\n• High energy efficiency due to less heat generation\n• Electrically similar to popular MJD148 series\n• Low collector emitter saturation voltage\n• Fast switching speeds;

4 A, 45 V NPN Bipolar Power Transistor

The NPN Bipolar Power Transistor is designed for general purpose amplifier and low speed switching applications. • Lead Formed for Surface Mount Applications in Plastic Sleeves (No Suffix)\n• Lead Formed Version Available in 16 mm Tape and Reel (\"T4\" Suffix)\n• High Gain - 50 Min @ IC = 2.0 Amps\n• Low Saturation Voltage - 0.5 V @ IC = 2.0 Amps\n• High Current Gain-Bandwidth Product - fT = 3.0 MHz Min @ IC =;

NPN Silicon Power Transistor

NPN Silicon Power Transistor DPAK For Surface Mount Applications Designed for general purpose amplifier and low speed switching applications. Features • High Gain − 50 Min @ IC = 2.0 A • Low Saturation Voltage − 0.5 V @ IC = 2.0 A • High Current Gain − Bandwidth Product − fT = 3.0 MHz Min @

isc Silicon NPN Power Transistor

DESCRIPTION • DC Current Gain- : hFE = 85(Min) @ IC= 0.5A • Low Collector Saturation Voltage- : VCE(sat) = 0.5V(Max.)@ IC= 2A • DPAK for Surface Mount Applications • Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS • Designed for use in general

NPN SILICON PLASTIC POWER TRANSISTORS

NPN SILICON PLASTIC POWER TRANSISTORS Designed for General Purpose Amplifier and Low Speed Switching Applications

NPN Silicon Power Transistor

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NPN Silicon Power Transistor

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丝印代码：MJD148A；45 V, 4 A NPN high power bipolar transistor

Features and benefits • High thermal power dissipation capability • High energy efficiency due to less heat generation • Electrically similar to popular MJD148 series • Low collector emitter saturation voltage • Fast switching speeds • Qualified according to AEC-Q101 and recommended for use

45 V, 4 A NPN high power bipolar transistor

Features and benefits • High thermal power dissipation capability • High energy efficiency due to less heat generation • Electrically similar to popular MJD148 series • Low collector emitter saturation voltage • Fast switching speeds • Qualified according to AEC-Q101 and recommended for use

NPN Silicon Power Transistor

NPN Silicon Power Transistor DPAK For Surface Mount Applications Designed for general purpose amplifier and low speed switching applications. Features • High Gain − 50 Min @ IC = 2.0 A • Low Saturation Voltage − 0.5 V @ IC = 2.0 A • High Current Gain − Bandwidth Product − fT = 3.0 MHz Min @

NPN Silicon Power Transistor

文件：115.31 Kbytes Page：5 Pages

NPN Silicon Power Transistor

文件：91.63 Kbytes Page：6 Pages

封装/外壳：TO-252-3，DPak（2 引线 + 接片），SC-63 包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 描述：TRANS NPN 45V 4A DPAK 分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个

NPN Silicon Power Transistor

文件：115.31 Kbytes Page：5 Pages

NPN Silicon Power Transistor

文件：115.31 Kbytes Page：5 Pages

封装/外壳：TO-252-3，DPak（2 引线 + 接片），SC-63 包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 描述：TRANS NPN 45V 4A DPAK 分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个

NPN Silicon Power Transistor

文件：91.63 Kbytes Page：6 Pages

双极晶体管 - 双极结型晶体管(BJT) 4A 45V 20W NPN

HF amplifier modules

DESCRIPTION The BGY148A and BGY148B are three-stage UHF amplifier modules in a SOT421A package. Each module consists of three NPN silicon planar transistor dies mounted together with matching and bias circuit components on a metallized ceramic substrate. The modules produce an output power of 3 W

N-CHANNEL MOS LINEAR RF POWER FET

The RF MOSFETLine RF Power Field-Effect Transistor N-ChannelEnhancement-Mode Designed for power amplifier applications in industrial, commercial and amateur radio equipment to 175 MHz. • Superior High Order IMD • Specified 50 Volts, 30 MHz Characteristics Output Power = 30 Watts Pow

VHF variable capacitance diode

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Quad 741 Op Amps LM149 Wide Band Decompensated (AV MIN = 5)

文件：388.73 Kbytes Page：15 Pages

Quad 741 Op Amps LM149 Wide Band Decompensated (AV MIN = 5)

文件：388.73 Kbytes Page：15 Pages