COMPLEMENTARY POWER DARLINGTONS

The MJ900, MJ901, MJ1000 and MJ1001 are silicon epitaxial-bas transistors in monolithic Darlington configuration, and are mounted in JEDEC TO-3 metal case. They are intended for use in power linear and switching applications. Their complementary NPN types are the MJ1000 and MJ1001 respectively.

isc Silicon PNP Darlington Power Transistor

DESCRIPTION • Collector-Emitter Breakdown Voltage- : V(BR)CEO=-60V(Min.) • High DC Current Gain- : hFE= 1000(Min.)@IC=-3A • Low Collector Saturation Voltage- : VCE (sat)=-2.0V(Max.)@ IC=-3A APPLICATIONS • Designed for use as output devices in complementary general purpose ampl

Power Transistors

Power Transistors TO-3 Case (Continued)

COMPLEMENTARY POWER DARLINGTONS

The MJ900, MJ901, MJ1000 and MJ1001 are silicon epitaxial-bas transistors in monolithic Darlington configuration, and are mounted in JEDEC TO-3 metal case. They are intended for use in power linear and switching applications. PNP types are the MJ900 and MJ901, and their complementary NPN types

COMPLEMENTARY POWER DARLINGTONS

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COMPLEMENTARY POWER DARLINGTONS

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