isc Silicon PNP Darlingtion Power Transistor

DESCRIPTION ·Built-in Base-Emitter Shunt Resistors ·High DC current gain hFE = 1000 (Min) @ IC = -5A ·Collector-Emitter Breakdown Voltage V(BR)CEO= -60V(Min) ·Complement to type MJ3000 APPLICATIONS ·Designed for use as output devices in complementary general purpose

Medium-Power Complementary Silicon Transistors

Medium-Power Complementary Silicon Transistors . . . for use as output devices in complementary general purpose amplifier applications. • High DC Current Gain — hpE = 4000 (Typ) @ IQ = 5.0 Adc • Monolithic Construction with Built-in Base-Emitter Shunt Resistors

Silicon PNP Power Transistors

DESCRIPTION ·With TO-3 package ·DARLINGTON ·High DC current gain ·Complement to type MJ3000/3001 APPLICATIONS ·For use as output devices in complementary general purpose amplifier applications

Power Transistors

Power Transistors TO-3 Case (Continued)

Silicon complementary trasistors power darlington

Power Transistors TO-3 Case (Continued)

10 AMPERE DARLINGTON POWER TRANSISTORS COMPLEMENTARY SILICON 60.80 VOLTS 150 WATTS

Medium-Power Complementary Silicon Transistors . . . for use as output devices in complementary general purpose amplifier applications. • High DC Current Gain — hFE = 4000 (Typ) @ IC = 5.0 Adc • Monolithic Construction with Built–in Base–Emitter Shunt Resistors

COMPLEMENTARY POWER DARLINGTONS

COMPLEMENTARY POWER DARLINGTONS The MJ2500, and MJ2501 are silicon epitaxial-base PNP power transistors in monolithic Darlington configuration and are mounted in Jedec TO-3 metal case. They are intented for use in power linear and switching applications. The complementary NPN types are the MJ30

COMPLEMENTARY POWER DARLINGTONS

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Transistor

Silicon NPN Power Transistors

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COMPLEMENTARY POWER DARLINGTONS

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MEDIUMPOWER TRANSISTORS COMPLEMENTARY SILICON

3M??Four-Wall Header

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LONG FRAME (1/4) TWIN ROW JACK PANELS

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Low Value Metal Film Resistors

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CAPTIVE PANEL SCREWS

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Thermal Grease

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