isc Silicon NPN Power Transistor

DESCRIPTION • Collector-Emitter Sustaining Voltage- : VCEO(SUS) = 500V(Min) • High Switching Speed APPLICATIONS • Designed for high-voltage ,high-speed, power switching in inductive circuits where fall time is critical. They are particularly suited for line-operated switchmode applications. •

POWER TRANSISTOR(5A,450V,125W)

SWITCHMODE SERIES NPN SILICON POWER TRANSISTORS 5 AMPERE SILICON POWER TRANSISTORS 450 VOLTS 125 WATTS

POWER TRANSISTORS(5A,450V,80W)

SWITCHMODE SERIES NPN SILICON POWER TRANSISTORS

5.0 AMPERE NPN SILICON POWER TRANSISTORS 450 VOLTS 80 WATTS

These transistors are designed for high-voltage, high-speed switching of inductive circuits where fall time and RBSOA are critical. They are particularly well-suited for line-operated switchmode applications. The MJE16004 is a high-gain version of the MJE16002 and MJH16002 for applications where

POWER TRANSISTORS(5A,450V,100W)

SWITCHMODE SERIES NPN SILICON POWER TRANSISTORS 5 AMPERE POWER TRANSISTORS 450 VOLTS 100 WATTS (NPN)

Silicon NPN Transistor RF Power Output, PO = 13.5W, 175MHz

Silicon NPN Transistor RF Power Output, PO = 13.5W, 175MHz