COMPLEMENTARY SILICON DARLINGTON POWER TRANSISTORS

High−Current Complementary Silicon Power Transistors are for use as output devices in complementary general purpose amplifier applications. Features • High DC Current Gain − hFE = 1000 (Min) @ IC = 25 Adc hFE = 400 (Min) @ IC = 50 Adc • Curves to 100 A

High-Current Complementary Silicon Power Transistors

High-Current Complementary Silicon Power Transistors are for use as output devices in complementary general purpose amplifier applications. Features • High DC Current Gain - hFE = 1000 (Min) @ Ic = 25Adc hFE = 400 (Min)@ Ic = 50 Adc • Curves to 100 A (P

COMPLEMENTARY DARLINGTON POWER TRANSISTOR

FEATURES • HIGH DC CURRENT GAIN HFE = 1000 Min @ IC = 25A HFE = 400 Min 0@ IC = 50A • CURVES TO 100A (Pulsed) • DIODE PROTECTION TO RATED IC • MONOLITHIC CONSTRUCTION WITH BUILT-IN BASE – EMITTER SHUNT RESISTOR • JUNCTION TEMPERATURE TO +200°C APPLICATIONS For use as output de

POWER TRANSISTOR(50A,60-120V,300W)

COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS . . . designed for use as output devices in complementary general purpose amplifier applications. • High Gain Darlington Performance • High DC Current Gain: hFE = 1000 (Min) @ IC = 25 A hFE = 400 (Mi

50 AMPERE COMPLEMENTARY SILICON DARLINGTON POWER TRANSISTORS 60.120 VOLTS 300 WATTS

High-Current Complementary Silicon Transistor . . . for use as output devices in complementary general purpose amplifier applications. • High DC Current Gain — hFE = 1000 (Min) @ IC = 25 Adc hFE = 400 (Min) @ IC = 50 Adc • Curves to 100 A (Pulsed) •

50 A，30V，NPN 达林顿双极功率晶体管

此类双极功率达林顿晶体管用作互补通用放大器应用中的输出器件。 • High DC Current Gain - hFE = 1000 (Min) @ IC = 25 Adc hFE = 400 (Min) @ IC = 50 Adc\n• Curves to 100 A (Pulsed)\n• Diode Protection to Rated IC\n• Monolithic Construction with Built-In Base-Emitter Shunt Resistor\n• Junction Temperature to +200°C\n• Pb-Free Packages are Available;

isc Silicon NPN Darlington Power Transistor

文件：51.56 Kbytes Page：2 Pages

Trans Darlington NPN 90V 50A 3-Pin(2+Tab) TO-204 Tray

Bipolar Junction Transistors

封装/外壳：TO-204AE 包装：托盘 描述：TRANS NPN DARL 90V 50A TO204 分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个

High?묬urrent Complementary Silicon Power Transistors

文件：68.44 Kbytes Page：4 Pages

High-Current Complementary Silicon Power Transistors

文件：121.71 Kbytes Page：4 Pages

High-Current Complementary Silicon Power Transistors

文件：121.71 Kbytes Page：4 Pages

High?묬urrent Complementary Silicon Power Transistors

文件：68.44 Kbytes Page：4 Pages

封装/外壳：TO-204AE 包装：托盘 描述：TRANS NPN DARL 90V 50A TO204 分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个

USB to CF/ATA/SM/Flash Interface Controller, Mass Storage Class Compliant

General Description SN11030 is a high-performance integrated circuit to bridge USB and CF/ATA/SM/Flash compliance devices. It provides a flexible and cost efficient single chip solution for external storage applications that intend to utilize the convenience of USB. To help the system manufacture