POWER TRANSISTORS(15A,150-250V,175W)

15 AMPERE COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTOR 150 - 250 VOLTS 175 WATTS MJ11017,MJ11019,MJ11021 => PNP MJ11018,MJ11020,MJ11022 => NPN

30 AMPERE DARLINGTON POWER TRANSISTORS COMPLEMENTARY SILICON 60.120 VOLTS 200 WATTS

Complementary Darlington Silicon Power Transistors . . . designed for use as general purpose amplifiers, low frequency switching and motor control applications. • High dc Current Gain @ 10 Adc — hFE = 400 Min (All Types) • Collector–Emitter Sustaining Voltage VCEO(sus

isc Silicon PNP Darlington Power Transistor

DESCRIPTION • High DC Current Gain- : hFE = 400(Min)@ IC= -10A • Collector-Emitter Sustaining Voltage- : VCEO(SUS) = -150V(Min) • Low Collector-Emitter Saturation Voltage- : VCE(sat) = -2.0V(Max)@ IC= -10A = -3.4V(Max)@ IC= -15A • Complement to Type MJ1101

PNP SILICON DARLINGTON TRANSISTOR

PNP SILICON DARLINGTON TRANSISTOR SWITCHING REGULATORS PWM INVERTERS SOLENOID AND RELAY DRIVERS

PNP SILICON DARLINGTON TRANSISTOR(SWITCHING REGULATORS PWM INVERTERS SOLENOID AND RELAY DRIVERS)

PNP SILICON DARLINGTON TRANSISTOR SWITCHING REGULATORS PWM INVERTERS SOLENOID AND RELAY DRIVERS

DARLINGTON POWER TRANSISTORS COMPLEMENTARY SILICON

DARLINGTON POWER TRANSISTORS COMPLEMENTARY SILICON

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DARLINGTON COMPLEMENTARY SILICON POWER TRANSISTORS

Complementary Darlington Silicon Power Transistors These devices are designed for use as general purpose amplifiers, low frequency switching and motor control applications. Features • High DC Current Gain @ 10 Adc — hFE = 400 Min (All Types) • Collector−Emitter Sustaining Voltage VCEO(sus)

15 AMPERE DARLINGTON COMPLEMENTARY SILICON POWER TRANSISTORS 150, 200, 250 VOLTS 150 WATTS

15 AMPERE DARLINGTON COMPLEMENTARY SILICON POWER TRANSISTORS

FLAT-BASE TYPE INSULATED TYPE

INTEGRATED FUNCTIONS AND FEATURES • 3-phase IGBT inverter bridge configured by the latest 3rd. generation IGBT and diode technologies. • Circuit for dynamic braking of motor regenerative energy. INTEGRATED DRIVE, PROTECTION AND SYSTEM CONTROL FUNCTIONS: • For P-Side IGBTs : Drive circuit, High