POWER TRANSISTORS(30A,60-120V,200W)

COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS . . .designed for use as output devices in complementary general purpose amplifier applications. • High Gain Darlington Performance • High DC Current Gain hFE= 1000 (Min) @ IC = 20 A • Monolithic Construction with Built−in Base Emitter Shun

30 AMPERE DARLINGTON POWER TRANSISTORS COMPLEMENTARY SILICON 60.120 VOLTS 200 WATTS

High-Current Complementary Silicon Transistors . . . for use as output devices in complementary general purpose amplifier applications. • High DC Current Gain - hFE= 1000 (Min) @ IC −20 Adc • Monolithic Construction with Built−in Base Emitter Shunt Resistor • Junction Temperature to +200C

PNP SILICON DARLINGTON TRANSISTOR(SWITCHING REGULATORS PWM INVERTERS SOLENOID AND RELAY DRIVERS)

PNP SILICON DARLINGTON TRANSISTOR SWITCHING REGULATORS PWM INVERTERS SOLENOID AND RELAY DRIVERS

Power Transistors

Power Transistors TO-3 Case (Continued)

DARLINGTON POWER TRANSISTORS COMPLEMENTARY SILICON

High-Current Complementary Silicon Transistors . . . for use as output devices in complementary general purpose amplifier applications. • High DC Current Gain — hFE = 1000 (Min) @ IC – 20 Adc • Monolithic Construction with Built–in Base Emitter Shunt Resistor • Junction Temperature to +200°C

isc Silicon PNP Darlington Power Transistor

DESCRIPTION • Collector-Emitter Breakdown Voltage- : V(BR)CEO= -90V(Min.) • High DC Current Gain- : hFE= 1000(Min.)@IC= -20A • Low Collector Saturation Voltage- : VCE (sat)= -3.0V(Max.)@ IC= -20A • Complement to Type MJ11014 APPLICATIONS • Designed for use as output devices in complementary

COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS

COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS ..designed for use as output devices in complementary general purpose amplifier applications. FEATURES: * High Gain Darlington Performance * High DCCurrent Gain hFE = 1000(Min) @ lc = 20A * Monolithic Construction with Built-in Base-Emitter S

COMPLEMENTARY SILICON POWER COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS

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Trans Darlington PNP 90V 30A 3-Pin(2+Tab) TO-3 Sleeve

200W PNP Darlington BJT Transistor

Through-Hole Transistor-Bipolar Power (>1A) PNP Darlington

Bipolar PNP Device in a Hermetically sealed TO3

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DUAL 4 INPUT NAND SCHMITT TRIGGER

DESCRIPTION The 74AC/ACT11013 high-performance CMOS devices combine very high speed and high output drive comparable to the most advanced TTL families.

DUAL 4 INPUT NAND SCHMITT TRIGGER

DESCRIPTION The 74AC/ACT11013 high-performance CMOS devices combine very high speed and high output drive comparable to the most advanced TTL families.