POWER TRANSISTORS(20A,750-850V,250W)

SWITCHMODE SERIES NPN SILICON POWER DARLINGTON TRANSISTORS WITH BASE-EMITTER SPEEDUP DIODE The MJ10024 and MJ10025 dartington transistors are designed for high-voltage, high-speed, power switching in inductive circuits where fall time is critical. They are particularly suited for line oper -ated

NPN SILICON POWER DARLINGTON TRANSISTOR

SWITCHMODE SERIES NPN SILICON POWER DARLINGTON TRANSISTORS WITH BASE-EMITTER SPEEDUP DIODE The MJ10024 and MJ10025 dartington transistors are designed for high-voltage, high-speed, power switching in inductive circuits where fall time is critical. They are particularly suited for line oper -ated

THE SLIM POWER RELAY

FEATURES • Slim size 28 mm (L)×5 mm (W)×15 mm (H) 1.102 inch (L)×.197 inch (W)×.591 inch (H) permits high density mounting • Wide switching capacity: 100 mA/12 V DC-6A/250 V AC • High sensitivity: 170mW • High breakdown (4,000 V) and surge (6,000 V) voltage between contacts and

26.5GHz, 18GHz COAXIAL SWITCH

FEATURES 1. High frequency characteristics (Impedance 50Ω) 2. SPDT and transfer type available 3. High sensitivity Nominal operating power: 840 mW (SPDT, Failsafe type) 1540 mW (Transfer, Failsafe type) 4. Long life: 5 ×106 (SPDT) TYPICAL APPLICATIONS Wireless and mobile

Shielded Bags, Standard and Zipped

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Nylon PCB Supports - Imperial Spacing

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1.00mm PITCH CONNECTOR

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