NPN SILICON POWER DARLINGTON TRANSISTORS

SWITCHMODE™ Series NPN Silicon Power Darlington Transistors with Base-Emitter Speedup Diode The MJ10020 and MJ10021 Darlington transistors are designed for high–voltage, high–speed, power switching in inductive circuits where fall time is critical. They are particularly suited for line operated

NPN Silicon Power DarligtonTransistor with Base-Emitter Speedup Diode 60 AMPERE, 200 AND 250 VOLTS, 250 WATTS

FEATURES: 1. Fast Turn–Off Times 150 ns Inductive Fall Time at 25º C (Typ) 750 ns Inductive Storage Time at 25 ºC (Typ) 2. Operating Temperature Range –65 to +200º C 3. 100º C Performance Specified for: Reversed Biased SOA with Inductive Loads Switching Times with Inductive Loads Saturatio

POWER TRANSISTORS(60A,200-250V,250W)

60 AMPERE NPN SILICON POWER DARLINGTON TRANSISTORS 200 AND 250 VOLTS 250 WATTS

SWITCHMODE Series NPN Silicon Power Darlington Transistors with Base-Emitter Speedup Diode The MJ10020 and MJ10021 Darlington transistors are designed for high–voltage, high–speed, power switching in inductive circuits where fall time is critical. They are particularly suited for line operated

NPN Silicon Power Darlington Transistors with Base-Emitter Speedup Diode

SWITCHMODE Series NPN Silicon Power Darlington Transistors with Base-Emitter Speedup Diode The MJ10020 and MJ10021 Darlington transistors are designed for high-voltage, high-speed, power switching in inductive circuits where fall time is critical. They are particularly suited for line operated s

250W NPN Darlington BJT Transistor

Trans Darlington NPN 250V 60A 3-Pin(2+Tab) TO-3

Power MOS 7 is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS.

Power MOS 7® is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching losses are addressed with Power MOS 7® by significantly lowering RDS(ON) and Qg. Power MOS 7® combines lower conduction and switching losses along with exceptionally

Power MOS 7 is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS.

Power MOS 7® is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching losses are addressed with Power MOS 7® by significantly lowering RDS(ON) and Qg. Power MOS 7® combines lower conduction and switching losses along with exceptionally

Nylon PCB Supports - Imperial Spacing

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Power MOS 7 is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS.

文件：155.78 Kbytes Page：5 Pages

Power MOS 7 is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS.

文件：155 Kbytes Page：5 Pages