SWITCHMODE SERIES NPN SILICON POWER DARLINGTON TRANSISTORS WITH BASE-EMITTER SPEEDUP DIODE

The MJ10008 and MJ10009 darlington transistors are designed for high-voltage, high-speed, power switching in inductive circuits where fall time is critical. They are particularly suited for line operated switch-mode applications such as: FEATURES: * Continuous Collector Current - lc = 20 A * Sw

POWER TRANSISTORS(20A,400-500V,175W)

The MJ10008 and MJ10009 darlington transistors are designed for high-voltage, high-speed, power switching in inductive circuits where fall time is critical. They are particularly suited for line operated switch-mode applications such as: FEATURES: * Continuous Collector Current - lc = 20 A * Sw

20 AMPERE NPN SILICON POWER DARLINGTON TRANSISTORS 450 and 500 VOLTS 175 WATTS

The MJ10009 Darlington transistor is designed for high–voltage, high–speed, power switching in Inductive circuits where fall time is critical. It is particularly suited for line operated switchmode applications such as: • Switching Regulators • Inverters • Solenoid and Relay Drivers • Motor Co

Silicon NPN Darlington Power Transistor

DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 500V(Min) ·DC Current Gain- : hFE= 40(Min)@ IC=5A APPLICATIONS · Inverters · Motor Controls · Solenoid and Relay Drivers

NPN SILICON POWER DARLINGTON TRANSISTORS WITH BASE-EMITTER SPEEDUP DIODE

The MJ10008 and MJ10009 darlington transistors are designed for high-voltage, high-speed, power switching in inductive circuits where fall time is critical. They are particularly suited for line operated switch-mode applications such as: FEATURES: * Continuous Collector Current - lc = 20 A * Sw

NPN SILICON TRANSISTOR(SWITCHING REGULATORS PWM INVERTERS SOLENOID AND RELAY DRIVERS)

NPN SILICON TRANSISTOR SWITCHING REGULATORS PWM INVERTERS SOLENOID AND RELAY DRIVERS

NPN Silicon Power Darlington Transistor

NPN Silicon Power Darlington Transistor

NPN SILICON POWER DARLINGTON TRANSISTORS

SWITCHMODE Series NPN Silicon Power Darlington Transistor with Base-Emitter Speedup Diode The MJ10009 Darlington transistor is designed for high–voltage, high–speed, power switching in Inductive circuits where fall time is critical. It is particularly suited for line operated switchmode applicati

175W NPN Darlington BJT Transistor

This BJT is packaged in TO-3 package.\n\n Available as High Reliability device per MIL-PRF-19500 indicate –HR suffix after the part number. Contact for -HR flow. Add \"PBF\" suffix for Pb-free lead finish.

NPN SILICON POWER DARLINGTON TRANSISTORS

Trans Darlington NPN 500V 20A 3-Pin(2+Tab) TO-3

GaAs Hall Device

Magnetic sensor ■ Features • Hall voltage: typ. 105 mV (VC = 6 V, B = 0.1 T) • Input resistance: typ. 0.75 kΩ • Satisfactory linearity of GaAs hall voltage with respect to the magnetic field • Small temperature coefficient of the hall voltage: β ≤ − 0.06/°C • Sealed in the Mini type (4-pin)