POWER TRANSISTORS(20A,400-500V,175W)

The MJ10008 and MJ10009 darlington transistors are designed for high-voltage, high-speed, power switching in inductive circuits where fall time is critical. They are particularly suited for line operated switch-mode applications such as: FEATURES: * Continuous Collector Current - lc = 20 A * Sw

SWITCHMODE SERIES NPN SILICON POWER DARLINGTON TRANSISTORS WITH BASE-EMITTER SPEEDUP DIODE

The MJ10008 and MJ10009 darlington transistors are designed for high-voltage, high-speed, power switching in inductive circuits where fall time is critical. They are particularly suited for line operated switch-mode applications such as: FEATURES: * Continuous Collector Current - lc = 20 A * Sw

NPN SILICON POWER DARLINGTON TRANSISTORS WITH BASE-EMITTER SPEEDUP DIODE

The MJ10008 and MJ10009 darlington transistors are designed for high-voltage, high-speed, power switching in inductive circuits where fall time is critical. They are particularly suited for line operated switch-mode applications such as: FEATURES: * Continuous Collector Current - lc = 20 A * Sw

NPN Silicon Power Darlington Transistor

NPN Silicon Power Darlington Transistor

Trans Darlington NPN 450V 30A 3-Pin(2+Tab) TO-3

80V/2.5A Peak, High Frequency Full Bridge FET Driver

The HCA10008 is a high frequency, medium voltage Full Bridge N-Channel FET driver IC, available in 20 lead plastic SOIC package. The HCA10008 can drive every possible switch combination except those which would cause a shoot through condition. The HCA10008 can switch at frequencies up to 1MHz and

GaAs Hall Device

GaAs Hall Device Magnetic sensor ■ Features • Hall voltage: typ. 105 mV (VC = 6 V, B = 0.1 T) • Input resistance: typ. 750 kΩ • Satisfactory linearity of GaAs hall voltage with respect to the magnetic field • Small temperature coefficient of the hall voltage: β ≤ − 0.06/°C • Mini type (4-pi

3 PHASE BRIDGE MODULES

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