SWITCHMODE SERIES NPN SILICON POWER DARLINGTON TRANSISTORS WITH BASE-EMITTER SPEEDUP DIODE

SWITCHMODE SERIES NPN SILICON POWER DARLINGTON TRANSISTORS WITH BASE-EMITTER SPEEDUP DIODE 20 AMPERE POWER DARLINGTON TRANSISTORS 350-400 VOLTS 175 WATTS

POWER TRANSISTORS(20A,350-400V,175W)

SWITCHMODE SERIES NPN SILICON POWER DARLINGTON TRANSISTORS WITH BASE-EMITTER SPEEDUP DIODE 20 AMPERE POWER DARLINGTON TRANSISTORS 350-400 VOLTS 175 WATTS

SWITCHMODE SERIES NPN SILICON POWER DARLINGTON TRANSISTORS

SWITCHMODE SERIES NPN SILICON POWER DARLINGTON TRANSISTORS WITH BASE-EMITTER SPEEDUP DIODE The MJ10004 and MJ10006 darlington transistors are designed for high-voltage, high-speed, power switching in inductive circuits where fall time is critical. They are particularly suited for line oper -ate

NPN SILICON TRANSISTOR(SWITCHING REGULATORS PWM INVERTERS SOLENOID AND RELAY DRIVERS)

NPN SILICON TRANSISTOR SWITCHING REGULATORS PWM INVERTERS SOLENOID AND RELAY DRIVERS

175W NPN Darlington BJT Transistor

Trans Darlington NPN 350V 30A 3-Pin(2+Tab) TO-3

AFE10004 4-Channel Power-Amplifier Precision Analog Front End With Integrated EEPROM and Gate Bias Switches

1 Features • Local and remote diode temperature sensor – ±2.5°C accuracy, maximum – 0.0625°C resolution • Internal EEPROM for autonomous operation – Four independent transfer functions storage – Device configuration storage – Open space for user storage • Four analog outputs – Four monoto

Indicating insert

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Nylon PCB Supports - Imperial Spacing

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High-Temp PGA ZIF Test & Burn-in Socket for Footprints on Std 8x8 to 21x21 Grid

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AFE10004 4-Channel Power-Amplifier Precision Analog Front End With Integrated EEPROM and Gate Bias Switches

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