SWITCHMODE SERIES NPN SILICON POWER DARLINGTON TRANSISTORS WITH BASE-EMITTER SPEEDUP DIODE

SWITCHMODE SERIES NPN SILICON POWER DARLINGTON TRANSISTORS WITH BASE-EMITTER SPEEDUP DIODE 20 AMPERE POWER DARLINGTON TRANSISTORS 350-400 VOLTS 175 WATTS

POWER TRANSISTORS(20A,350-400V,175W)

SWITCHMODE SERIES NPN SILICON POWER DARLINGTON TRANSISTORS WITH BASE-EMITTER SPEEDUP DIODE 20 AMPERE POWER DARLINGTON TRANSISTORS 350-400 VOLTS 175 WATTS

SWITCHMODE SERIES NPN SILICON POWER DARLINGTON TRANSISTORS

SWITCHMODE SERIES NPN SILICON POWER DARLINGTON TRANSISTORS WITH BASE-EMITTER SPEEDUP DIODE The MJ10004 and MJ10006 darlington transistors are designed for high-voltage, high-speed, power switching in inductive circuits where fall time is critical. They are particularly suited for line oper -ate

NPN SILICON TRANSISTOR(SWITCHING REGULATORS PWM INVERTERS SOLENOID AND RELAY DRIVERS)

NPN SILICON TRANSISTOR SWITCHING REGULATORS PWM INVERTERS SOLENOID AND RELAY DRIVERS

175W NPN Darlington BJT Transistor

This BJT is packaged in TO-3 package.\n\n Available as High Reliability device per MIL-PRF-19500 indicate –HR suffix after the part number. Contact for -HR flow. Add \"PBF\" suffix for Pb-free lead finish.

Trans Darlington NPN 350V 30A 3-Pin(2+Tab) TO-3

GaAs Hall Device

■ Features • Hall voltage: typ. 150 mV (VC = 6 V, B = 0.1 T) • Input resistance: typ. 0.85 kΩ • Satisfactory linearity of GaAs hall voltage with respect to the magnetic field • Small temperature coefficient of the hall voltage: β ≤ − 0.06/°C • Mini type (4-pin) package with position

3 PHASE BRIDGE MODULES

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