TrenchandFieldStopIGBT1200V25A

Features •LowVCE(sat)Trench-FSIGBTtechnology •Positivetemperaturecoefficient •Includingfast&softrecoveryanti-parallelFWD •Highshortcircuitcapability(10us) •HalogenFree.“Green”Device(Note1) •EpoxyMeetsUL94V-0FlammabilityRating •LeadFreeFinish/RoHSCompliant

封装/外壳：TO-247-3 包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 描述：IGBT 1200V 25A,TO-247AB 分立半导体产品 晶体管 - UGBT、MOSFET - 单

LowVCE(sat)HighspeedIGBT

LowVCE(sat)HighspeedIGBT Features •InternationalstandardpackageJEDECTO-247AD •2ndgenerationHDMOSTMprocess •LowVCE(sat) -forlowon-stateconductionlosses •MOSGateturn-on -drivesimplicity Applications •ACmotorspeedcontrol •DCservoandrobotdrives •DC

Extremelyenhancedavalanchecapability

GeneralDescription Din-TekFieldStopTrenchIGBTsofferlowswitchinglosses,high energyefficiencyandshortcircuitruggedness. Itisdesignedforapplicationssuchasmotorcontrol,uninterruptedpower supplies(UPS),generalinverters. FEATURES ·Highspeedswitching ·Highruggedness,

IGBT

GeneralDescription EmployingNPTtechnology,Fairchild’sANseriesofIGBTsprovideslowconductionandswitchinglosses.TheAN seriesoffersansolutionforapplicationsuchasinductionheating(IH),motorcontrol,generalpurposeinvertersanduninterruptiblepowersupplies(UPS).

Insulated-GateBipolarTransistorinaTO-3PPlasticPackage

文件：769.42 Kbytes Page：6 Pages

1200V,25ANPTTrenchIGBT

文件：1.38861 Mbytes Page：9 Pages