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60VPNPGeneral-PurposeTransistor

Features •HighDCCurrentGain(hFE)Range:100~300 •High-CurrentGainBandwidthProduct(fT): 200MHz(Minimum) •MaximumTurn-OnTime(ton):45ns •MaximumTurn-OffTime(toff):100ns •Ultra-SmallSurface-MountPackage:SOT-223(PZT2907A) Description ThePN2907A,MMBT2907A,and

ONSEMION Semiconductor

安森美半导体安森美半导体公司

ONSEMI

PNPGeneral-PurposeTransistor

Description Thisdeviceisdesignedforusewithgeneral−purposeamplifiersand switchesrequiringcollectorcurrentsto500mA. ThesedevicesarePb−Free,HalogenFree/BFRFree,BerylliumFree andareRoHScompliant.

ONSEMION Semiconductor

安森美半导体安森美半导体公司

ONSEMI

60VPNPGeneral-PurposeTransistor

Features •HighDCCurrentGain(hFE)Range:100~300 •High-CurrentGainBandwidthProduct(fT): 200MHz(Minimum) •MaximumTurn-OnTime(ton):45ns •MaximumTurn-OffTime(toff):100ns •Ultra-SmallSurface-MountPackage:SOT-223(PZT2907A) Description ThePN2907A,MMBT2907A,and

ONSEMION Semiconductor

安森美半导体安森美半导体公司

ONSEMI

500mALOWDROPOUTVOLTAGEREGULATOR

GENERALDESCRIPTION TheAMS2907seriesofadjustableandfixedvoltageregulatorsaredesignedtoprovide500mAoutputcurrentandtooperatedownto1Vinput-to-outputdifferential.Thedropoutvoltageofthedeviceisguaranteedmaximum1.3Vatmaximumoutputcurrent,decreasingatlowerloadc

ADMOS

Advanced Monolithic Systems

ADMOS

808MHzCenterFrequency

文件:44.39 Kbytes Page:2 Pages

KR

KR Electronics, Inc.

KR
更新时间:2025-7-31 10:16:01
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
AMS
21+
SOT89
23600
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22+
SOT89
8200
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原装
32000
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2022+
SOT89
22000
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23+
SOT-89
4000
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AMS
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SOT-89
28081
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23+
SOT-89
8650
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SOT-89
50000
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SOT89
300
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2016+
SOT89
3526
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