位置:首页 > IC中文资料第1779页 > MGY25N120
型号 | 功能描述 | 生产厂家&企业 | LOGO | 操作 |
---|---|---|---|---|
MGY25N120 | Insulated Gate Bipolar Transistor This Insulated Gate Bipolar Transistor (IGBT) uses an advanced termination scheme to provide an enhanced and reliable high voltage blocking capability. Short circuit rated IGBT’s are specifically suited for applications requiring a guaranteed short circuit withstand time. Fast switching characteri | ONSEMI 安森美半导体 | ||
MGY25N120 | Insulated Gate Bipolar Transistor This Insulated Gate Bipolar Transistor (IGBT) uses an advanced termination scheme to provide an enhanced and reliable high voltage blocking capability. Short circuit rated IGBT’s are specifically suited for applications requiring a guaranteed short circuit withstand time. Fast switching characteri | Motorola 摩托罗拉 | ||
Insulated Gate Bipolar Transistor with Anti-Parallel Diode Insulated Gate Bipolar Transistor with Anti-Parallel Diode N–Channel Enhancement–Mode Silicon Gate This Insulated Gate Bipolar Transistor (IGBT) is co–packaged with a soft recovery ultra–fast rectifier and uses an advanced termination scheme to provide an enhanced and reliable high voltage block | Motorola 摩托罗拉 | |||
Insulated Gate Bipolar Transistor with Anti-Parallel Diode Insulated Gate Bipolar Transistor with Anti-Parallel Diode N–Channel Enhancement–Mode Silicon Gate This Insulated Gate Bipolar Transistor (IGBT) is co–packaged with a soft recovery ultra–fast rectifier and uses an advanced termination scheme to provide an enhanced and reliable high voltage block | ONSEMI 安森美半导体 | |||
Low VCE(sat) High speed IGBT Low VCE(sat) High speed IGBT Features • International standard package JEDEC TO-247 AD • 2nd generation HDMOSTM process • Low VCE(sat) - for low on-state conduction losses • MOS Gate turn-on - drive simplicity Applications • AC motor speed control • DC servo and robot drives • DC | IXYS 艾赛斯 | |||
Extremely enhanced avalanche capability General Description Din-Tek Field Stop Trench IGBTs offer low switching losses, high energy efficiency and short circuit ruggedness. It is designed for applications such as motor control, uninterrupted power supplies(UPS), general inverters. FEATURES ·High speed switching ·High ruggedness, | DINTEK | |||
IGBT General Description Employing NPT technology, Fairchild’s AN series of IGBTs provides low conduction and switching losses. The AN series offers an solution for application such as induction heating (IH), motor control, general purpose inverters and uninterruptible power supplies (UPS). | FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司 | |||
Insulated-Gate Bipolar Transistor in a TO-3P Plastic Package 文件:769.42 Kbytes Page:6 Pages | FOSHAN 蓝箭电子 | |||
1200 V, 25 A NPT Trench IGBT 文件:1.38861 Mbytes Page:9 Pages | ONSEMI 安森美半导体 |
MGY25N120产品属性
- 类型
描述
- 型号
MGY25N120
- 制造商
Motorola Inc
IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
---|---|---|---|---|---|---|---|
24+ |
N/A |
2000 |
|||||
ON/安森美 |
22+ |
NA |
35000 |
原装现货,假一罚十 |
|||
TDK/东电化 |
2022+ |
0603 |
4000 |
原厂代理 终端免费提供样品 |
|||
风华 |
25+ |
DIP |
15000 |
国产替换现货降本 |
|||
mot |
24+ |
N/A |
6980 |
原装现货,可开13%税票 |
|||
ON/安森美 |
23+ |
NA |
12095 |
电子元器件供应原装现货. 优质独立分销。原厂核心渠道 |
|||
普德新星 |
23+ |
MODULE |
13000 |
原厂授权一级代理,专业海外优势订货,价格优势、品种 |
|||
24+ |
N/A |
69000 |
一级代理-主营优势-实惠价格-不悔选择 |
||||
麦科 |
24+ |
0402 |
50000 |
全新原装数量均有多电话咨询 |
|||
麦科 |
2016+ |
SMD |
50000 |
只做原装,假一罚十,公司可开17%增值税发票! |
MGY25N120规格书下载地址
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2019-3-28
DdatasheetPDF页码索引
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