InsulatedGateBipolarTransistor

InsulatedGateBipolarTransistor N–ChannelEnhancement–ModeSiliconGate ThisInsulatedGateBipolarTransistor(IGBT)isco–packagedwithasoftrecoveryultra–fastrectifierandusesanadvancedterminationschemetoprovideanenhancedandreliablehighvoltage–blockingcapability.Itsnew6

14A,600VN-CHANNELPOWERMOSFET

FEATURES *RDS(ON)≤0.55Ω@VGS=10V,ID=7.0A *Fastswitchingcapability *Avalancheenergytested *Improveddv/dtcapability,highruggedness

14A,600VN-CHANNELPOWERMOSFET

FEATURES *RDS(ON)≤0.6Ω@VGS=10V,ID=7.0A *Fastswitchingcapability *Avalancheenergyspecified *Improveddv/dtcapability,highruggedness

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent:ID=14A@TC=25℃ ·DrainSourceVoltage :VDSS=600V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=0.49Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-DC

DrainCurrentID=14A@TC=25C

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N-ChannelEnhancementModeMOSFET

文件：249.73 Kbytes Page：4 Pages