Insulated Gate Bipolar Transistor with Anti-Parallel Diode

This Insulated Gate Bipolar Transistor (IGBT) is co–packaged with a soft recovery ultra–fast rectifier and uses an advanced termination scheme to provide an enhanced and reliable high voltage blocking capability. Short circuit rated IGBTs are specifically suited for applications requiring a guaran

Insulated Gate Bipolar Transistor with Anti-Parallel Diode

High Voltage HiPerFET Power MOSFET

Features • International standard package JEDEC TO-247 AD • Low RDS (on) HDMOSTM process • Rugged polysilicon gate cell structure • Fast switching times Applications • Switch-mode and resonant-mode power supplies • Motor controls • Uninterruptible Power Supplies (UPS) • DC choppers Advan

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current : ID= 12A@ TC=25℃ ·Drain Source Voltage : VDSS= 1200V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 1.4Ω(Max) @ VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current : ID= 12A@ TC=25℃ ·Drain Source Voltage : VDSS= 1200V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 1.35Ω(Max) @ VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC

Polar Power MOSFET HiPerFET

Polar™ Power MOSFET HiPerFET™ N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode Features • International standard packages • Fast recovery diode • Unclamped Inductive Switching (UIS) rated • Low package inductance - easy to drive and to protect Advantages • Easy to mou

Polar Power MOSFET HiPerFET

Polar™ Power MOSFET HiPerFET™ N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode Features • International standard packages • Fast recovery diode • Unclamped Inductive Switching (UIS) rated • Low package inductance - easy to drive and to protect Advantages • Easy to mou