Power MOSFET P-Channel

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Power MOSFET 750 mAmps, 20 Volts

Power MOSFET 750 mAmps, 20 Volts P–Channel SOT–23 These miniature surface mount MOSFETs low RDS(on) assure minimal power loss and conserve energy, making these devices ideal for use in space sensitive power management circuitry. Typical applications are dc–dc converters and power managemen

P-CHANNEL ENHANCEMENT-MODE TMOS MOSFET

Part of the GreenLine™ Portfolio of devices with energy–conserving traits. These miniature surface mount MOSFETs utilize Motorola’s High Cell Density, HDTMOS process. Low rDS(on) assures minimal power loss and conserves energy, making this device ideal for use in space sensitive power mana

P-CHANNEL ENHANCEMENT-MODE TMOS MOSFET

Part of the GreenLine™ Portfolio of devices with energy–conserving traits. These miniature surface mount MOSFETs utilize Motorola’s High Cell Density, HDTMOS process. Low rDS(on) assures minimal power loss and conserves energy, making this device ideal for use in space sensitive power mana

Power MOSFET 750 mAmps, 20 Volts

Power MOSFET 750 mAmps, 20 Volts P–Channel SOT–23 These miniature surface mount MOSFETs low RDS(on) assure minimal power loss and conserve energy, making these devices ideal for use in space sensitive power management circuitry. Typical applications are dc–dc converters and power managemen

Power MOSFET 750 mAmps, 20 Volts P-Channel SOT-23

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Power MOSFET 750 mAmps, 20 Volts P-Channel SOT-23

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DUAL TMOS POWER MOSFET 1.6 AMPERES 20 VOLTS RDS(on) = 175 mOHM

Medium Power Surface Mount Products TMOS Dual P-Channel Field Effect Transistor Micro8 devices are an advanced series of power MOSFETs which utilize Motorola’s High Cell Density HDTMOS process to achieve lowest possible on–resistance per silicon area. They are capable of withstanding high energy

SINGLE TMOS POWER FET 1.8 AMPERES 20 VOLTS RDS(on) = 0.16 OHM

Medium Power Surface Mount Products TMOS Single P-Channel Field Effect Transistor Micro8 devices are an advanced series of power MOSFETs which utilize Motorola’s High Cell Density HDTMOS process to achieve lowest possible on–resistance per silicon area. They are capable of withstanding high ener

Power MOSFET

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P?묬hannel Power MOSFET

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