16 Amp Glass Passivated Silicon Rectifiers 50 to 1000 Volts

Features • Lead Free Finish/RoHS Compliant(Note 1) (P Suffix designates RoHS Compliant. See ordering information) • Low forward voltage drop • High current capability,High surge current capability • High reliability • Halogen free available upon request by adding suffix -HF • Case Material:

16 Amp Glass Passivated Silicon Rectifiers 50 to 1000 Volts

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16 Amp Glass Passivated Silicon Rectifiers 50 to 1000 Volts

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普通整流二极管

16 Amp Glass Passivated Silicon Rectifiers 50 to 1000 Volts

文件：149.5 Kbytes Page：3 Pages

16 Amp Glass Passivated Silicon Rectifiers 50 to 1000 Volts

文件：272.17 Kbytes Page：3 Pages

16 Amp Glass Passivated Silicon Rectifiers 50 to 1000 Volts

文件：149.5 Kbytes Page：3 Pages

封装/外壳：TO-220-2 包装：散装 描述：DIODE GPP TO-220AC 分立半导体产品 二极管 - 整流器 - 单

MICROWAVE POWER GaAs FET

High-power GaAs FET (small signal gain stage) S to X BAND / 0.15W non - matched DESCRIPTION The MGF1601B, medium-power GaAs FET with an N-channel Schottky gate, is designed for use in S to X band amplifiers and oscillators. The hermetically sealed metalceramic package assures minimum parasitic

Silicon PNP(NPN) epitaxial planer transistor

Silicon PNP epitaxial planer transistor (Tr1) Silicon NPN epitaxial planer transistor (Tr2) For general amplification ■ Features ● Two elements incorporated into one package. (Emitter-coupled transistors) ● Reduction of the mounting area and assembly cost by one half.

PLLatinum??Low Cost Dual Frequency Synthesizer

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PLLatinum??Low Cost Dual Frequency Synthesizer

文件：196.67 Kbytes Page：14 Pages

PLLatinum??Low Cost Dual Frequency Synthesizer

文件：196.67 Kbytes Page：14 Pages