Super Low Noise InGaAs HEMT

DESCRIPTION\nThe MGF431xG series super-low-noise HEMT(High Electron Mobility Transistor) is designed for use in L to K band amplifiers. The hermetically sealed metal-ceramic package assures minimum parasitic losses, and has a configuration suitable for microstrip circuits.FEATURES\nLow noise figure Low noise figure @ f=12GHz\n  MGF4316G : NF min.=0.80dB (MAX.)\n  MGF4319G : NF min.=0.50dB (MAX.)\nHigh associated gain\n  Gs=12.0 dB (MIN.) @ f=12GHzAPPLICATION\nL to K band low noise amplifiers.;

Super Low Noise InGaAs HEMT

文件：33.66 Kbytes Page：3 Pages

Super Low Noise InGaAs HEMT

文件：33.66 Kbytes Page：3 Pages

PROGRAMMABLE MODULO- N COUNTERS

OCTAL T1/E1/J1 Short Haul Line Interface Device

FEATURES • Monolithic device which integrates 8 T1/J1 or E1 short haul line interface circuits. • Software-selectable between T1/J1 and E1 operation on a per-device basis. • Meets or exceeds T1/J1 and E1 short haul network access specifications including ANSI T1.102, T1.403, T1.408, AT&T TR

Low Voltage Detector IC with Adjustable Output Delay

文件：326.71 Kbytes Page：6 Pages