MICROWAVE POWER GaAs FET?

DESCRIPTION The MGF2445, power GaAs FET with an N-channel schottky gate, is designed for use in S to Ku Band amplifiers.

MICROWAVE POWER GaAs FET

MICROWAVE POWER GaAs FET?

DESCRIPTION The MGF2445A, power GaAs FET with an N-channel schottky gate, is designed for use in S to Ku Band amplifiers.

MICROWAVE POWER GaAs FET?

DESCRIPTION The MGF2445A, power GaAs FET with an N-channel schottky gate, is designed for use in S to Ku Band amplifiers.

MICROWAVE POWER GaAs FET?

DESCRIPTION The MGF2445A, power GaAs FET with an N-channel schottky gate, is designed for use in S to Ku Band amplifiers.

MICROWAVE POWER GaAs FET

CK ROTARY SWITCH

FEATURES Standard 30° indexing, 60° and 90° available Moulded 27.5mm diameter Single wafer switch Maximum 12 positions Up to 4 poles per switch Shorting (make before break 30° indexing only) or non-shorting (break before make) Moulded stop or adjustable stops to restrict number of posit

Extra Dome Plugs

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Bandpass Filter

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GENERAL ELECTRICAL & MECHANICAL SPECIFICATION

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Crydoms CMR Series

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