High-power GaAs FET (small signal gain stage)

DESCRIPTION\nThe MGF0919A GaAs FET with an N-channel schottky Gate, is designed for use UHF band amplifiers.FEATURES\nHigh output power \n  Po=30dBm(TYP.) @f=1.9GHz,Pin=12dBm\nHigh power gain\n  Gp=19dB(TYP.) @f=1.9GHz\nHigh power added efficiency\n  add=37%(TYP.) @f=1.9GHz,Pin=12dBm\nHermetic P High output power \n  Po=30dBm(TYP.) @f=1.9GHz,Pin=12dBm\nHigh power gain\n  Gp=19dB(TYP.) @f=1.9GHz\nHigh power added efficiency\n  add=37%(TYP.) @f=1.9GHz,Pin=12dBm\nHermetic PackageAPPLICATION\nFor UHF Band power amplifiers ;

L & S BAND GaAs FET [ SMD non matched ]

L & S BAND GaAs FET [ SMD non matched ]

文件：43.04 Kbytes Page：4 Pages

L & S BAND GaAs FET [ SMD non - matched ]

文件：297.3 Kbytes Page：12 Pages

High-power GaAs FET (small signal gain stage)

文件：244.33 Kbytes Page：4 Pages

L & S BAND GaAs FET [ SMD non - matched ]

文件：297.3 Kbytes Page：12 Pages

High-power GaAs FET (small signal gain stage)

文件：244.33 Kbytes Page：4 Pages

GaAs PIN Diode SP2T

FEATURES ■ 3 - 5 GHz ■ 1.8 dB Insertion Loss ■ 124 dB Isolation ■ 24 nSec Switching Speed ■ Non-Reflective ■ TTL Driver ■ SMA Connectors

Bi-CMOS IC For VCMs Constant-current Driver IC

文件：89.25 Kbytes Page：8 Pages

LEADER TYPE

文件：491.53 Kbytes Page：1 Pages