High-power GaAs FET (small signal gain stage)

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L & S BAND GaAs FET [ SMD non - matched ]

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High-power GaAs FET (small signal gain stage)

High-power GaAs FET (small signal gain stage)

L & S BAND / 0.25W SMD non - matchedDESCRIPTION\nThe MGF0917A GaAs FET with an N-channel schottky Gate, is designed for use UHF band amplifiers.FEATURES\n• High output power\n   Po=24dBm(TYP.) @f=1.9GHz,Pin=4dBm\n• High power gain\n   Gp=21dB(TYP.) @f=1.9GHz\n• High power added efficiency\n add=38& • High output power\n   Po=24dBm(TYP.) @f=1.9GHz,Pin=4dBm\n• High power gain\n   Gp=21dB(TYP.) @f=1.9GHz\n• High power added efficiency\n add=38%(TYP.) @f=1.9GHz,Pin=4dBm\n• Hermetic PackageAPPLICATION\n• For UHF Band power amplifiers ;

High-power GaAs FET (small signal gain stage)

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900 MHz GSM CELLULAR INTEGRATED POWER AMPLIFIER GaAs MONOLITHIC INTEGRATED CIRCUIT

The MRFIC Line 900 MHz GaAs Integrated Power Amplifier This integrated circuit is intended for GSM class IV handsets. The device is specified for 2.5 Watts output power and 43 minimum power added efficiency under GSM signal conditions at 3.6 Volt supply voltage. To achieve this superior performa

LAN pulse transformer for 1000Base

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Common Mode Chokes - Radial

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