L & S BAND GaAs FET ( SMD non - matched )

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High-power GaAs FET (small signal gain stage)

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High-power GaAs FET (small signal gain stage)

High-power GaAs FET (small signal gain stage)

DESCRIPTION\nThe MGF0916A GaAs FET with an N-channel schottky Gate, is designed for use UHF band amplifiers.\n\nFEATURES\nHigh output power \n  Po=23dBm(TYP.) @f=1.9GHz,Pin=5dBm\nHigh power gain\n  Gp=19dB(TYP.) @f=1.9GHz\nHigh power added efficiency\n  add=30%(TYP.) @f=1.9GHz,Pin=5dBm\nHermetic High output power \n  Po=23dBm(TYP.) @f=1.9GHz,Pin=5dBm\nHigh power gain\n  Gp=19dB(TYP.) @f=1.9GHz\nHigh power added efficiency\n  add=30%(TYP.) @f=1.9GHz,Pin=5dBm\nHermetic Package\n\nAPPLICATION\nFor UHF Band power amplifiers;

High-power GaAs FET (small signal gain stage)

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SILICON GENERAL PURPOSE RF CASCODE AMPLIFIER

The MRFIC Line General Purpose RF Cascode Amplifier The MRFIC0916 is a cost–effective, high isolation cascode silicon monolithic amplifier in the industry standard SOT–143 surface mount package designed for general purpose RF applications. On chip bias circuitry sets the bias point while matchin

This series of filters has been designed to meet tempest and other requirements

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HIGH FREQUENCY PLANAR TRANSFORMERS

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