High-power GaAs FET (small signal gain stage)

DESCRIPTION\nThe MGF0912A, GaAs FET with an N-channel schottky gate, is designed for use in L/S band amplifiers.FEATURES\nHigh output power \n     Po=41.5dBm(TYP.) @f=1.9GHz,Pin=33dBm\nHigh power gain\n     Gp=10.5dB(TYP.) @f=1.9GHz\nHigh power added efficiency\n     P.A.E =38%(TYP.) @f=1.9GH High output power \n     Po=41.5dBm(TYP.) @f=1.9GHz,Pin=33dBm\nHigh power gain\n     Gp=10.5dB(TYP.) @f=1.9GHz\nHigh power added efficiency\n     P.A.E =38%(TYP.) @f=1.9GHz,Pin=33dBm\nHermetic PackageAPPLICATION\nFor L/S Band power amplifiers;

L & S BAND GaAs FET

L & S BAND GaAs FET

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High-power GaAs FET (small signal gain stage)

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High-power GaAs FET (small signal gain stage)

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900 MHz GaAs INTEGRATED POWER AMPLIFIER

The MRFIC Line 900 MHz GaAs Integrated Power Amplifier Designed primarily for use in high efficiency Analog Cellular applications, the MRFIC0912 is a two–stage power amplifier in Motorola’s proprietary Power Flat Pack 16–lead package. This integrated circuit requires minimal off-chip matching whi

1Watt SIP7 Single & Dual Output

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1.25 Watt DIP8 Sigle Output

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1 Watt SIP4 & SIP7 Single Output

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ECONOLINE - DC/DC - CONVERTER

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