L, S BAND POWER GaAs FET

DESCRIPTION The MGF0910A, GaAs FET with an N-channel schottky gate, is designed for use in UHF band amplifiers. FEATURES • Class A operation • High output power P1dB=38.0dBm(TYP.) @f=2.3GHz • High power gain GLP=11.0dB(TYP.) @f=2.3GHz • High power added efficiency P.A.E =

High-power GaAs FET (small signal gain stage)

文件：213.81 Kbytes Page：4 Pages

L, S BAND POWER GaAs FET

文件：207.96 Kbytes Page：4 Pages

High-power GaAs FET (small signal gain stage)

L, S BAND POWER GaAs FET

文件：207.96 Kbytes Page：4 Pages

High-power GaAs FET (small signal gain stage)

文件：213.81 Kbytes Page：4 Pages

Cascadable Silicon Bipolar MMIC Amplifier

Description The MSA-0910 is a high performance silicon bipolar Monolithic Microwave Integrated Circuit (MMIC) housed in a hermetic, high reliability package. This MMIC is designed for very wide bandwidth industrial and military applications that require flat gain and low VSWR. Features • Broadb

Silicon planar type

文件：49.05 Kbytes Page：4 Pages

Silicon planar type

文件：49.05 Kbytes Page：4 Pages

Silicon planar type

文件：49.05 Kbytes Page：4 Pages