位置：首页 > IC中文资料第10251页 > MGF0909
| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
MGF0909 | L,S BAND POWER GaAs FET? DESCRIPTION The MGF0909A, GaAs FET with an N-channel schottky gate, is designed for use in UHF band amplifiers. FEATURES • High output power P1dB=38dBm(TYP.) @f=2.3GHz • High power gain GLP=11dB(TYP.) @f=2.3GHz,Pin=20dBm • High power added efficiency hadd=45(TYP. | MITSUBISHI 三菱电机 |   | |
MGF0909 | L, S BAND POWER GaAs FET DESCRIPTION\nThe MGF0909A, GaAs FET with an N-channel schottky gate, is designed for use in UHF band amplifiers.FEATURES\n• High output power\n P1dB=38dBm(TYP.) @f=2.3GHz\n• High power gain\n GLP=11dB(TYP.) @f=2.3GHz,Pin=20dBm\n• High power added efficiency\n hadd=45%(TYP.) @f=2.3GHz,P1dB= • High output power\n P1dB=38dBm(TYP.) @f=2.3GHz\n• High power gain\n GLP=11dB(TYP.) @f=2.3GHz,Pin=20dBm\n• High power added efficiency\n hadd=45%(TYP.) @f=2.3GHz,P1dB=20dBmAPPLICATION\n For UHF Band power amplifiers ; | MITSUBISHI 三菱电机 | | |
MGF0909 | L, S BAND POWER GaAs FET DESCRIPTION\nThe MGF0909A, GaAs FET with an N-channel schottky gate, is designed for use in UHF band amplifiers.FEATURES\n• High output power\n P1dB=38dBm(TYP.) @f=2.3GHz\n• High power gain\n GLP=11dB(TYP.) @f=2.3GHz,Pin=20dBm\n• High power added efficiency\n hadd=45%(TYP.) @f=2.3GHz,P1dB= • High output power\n P1dB=38dBm(TYP.) @f=2.3GHz\n• High power gain\n GLP=11dB(TYP.) @f=2.3GHz,Pin=20dBm\n• High power added efficiency\n hadd=45%(TYP.) @f=2.3GHz,P1dB=20dBmAPPLICATION\n For UHF Band power amplifiers ; | MINEBEAMITSUMI 美蓓亚三美 | | |
L,S BAND POWER GaAs FET? DESCRIPTION The MGF0909A, GaAs FET with an N-channel schottky gate, is designed for use in UHF band amplifiers. FEATURES • High output power P1dB=38dBm(TYP.) @f=2.3GHz • High power gain GLP=11dB(TYP.) @f=2.3GHz,Pin=20dBm • High power added efficiency hadd=45(TYP. | MITSUBISHI 三菱电机 | | ||
L,S BAND POWER GaAs FET? 文件：38.08 Kbytes Page：3 Pages | MITSUBISHI 三菱电机 | | ||
High-power GaAs FET(small signal gain stage) 文件：115.2 Kbytes Page：3 Pages | MITSUBISHI 三菱电机 | | ||
L,S BAND POWER GaAs FET | MITSUBISHI 三菱电机 | | ||
L,S BAND POWER GaAs FET? 文件：38.08 Kbytes Page：3 Pages | MITSUBISHI 三菱电机 | | ||
High-power GaAs FET(small signal gain stage) 文件：115.2 Kbytes Page：3 Pages | MITSUBISHI 三菱电机 | | ||
0.25 Watt SIP4 & DIP8 Single Output 文件：101.43 Kbytes Page：3 Pages | RECOM | | ||
1 Watt SIP4 & SIP7 Single Output 文件：101.95 Kbytes Page：3 Pages | RECOM | | ||
1 Watt SIP4 Micro Size Single Output 文件：97.15 Kbytes Page：3 Pages | RECOM | |
MGF0909产品属性
- 类型
描述
- 型号
MGF0909
- 制造商
MITSUBISHI
- 制造商全称
Mitsubishi Electric Semiconductor
- 功能描述
L,S BAND POWER GaAs FET
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
MITSUBI |
23+ |
N/A |
7560 |
原厂原装 |
|||
FUJITSU/富士通 |
24+ |
235 |
现货供应 |
||||
MITSUBISHI/三菱 |
2450+ |
8850 |
只做原装正品假一赔十为客户做到零风险!! |
||||
MITSUBISHI |
24+ |
SMD |
5500 |
长期供应原装现货实单可谈 |
|||
Mitsubishi Electric (三菱) |
23+ |
NA |
20094 |
正纳10年以上分销经验原装进口正品做服务做口碑有支持 |
|||
MITSUBISHI/三菱 |
16+ |
NA |
880000 |
明嘉莱只做原装正品现货 |
|||
MITSUBISHI/三菱 |
23+ |
6000 |
专业配单保证原装正品假一罚十 |
||||
MITSUBISHI/三菱 |
2025+ |
SMD |
3000 |
原装进口价格优 请找坤融电子! |
|||
MOTO |
25+ |
SMD |
2789 |
全新原装自家现货!价格优势! |
|||
MITSUBISHI |
13+ |
TO-59 |
174 |
全新 发货1-2天 |
MGF0909规格书下载地址
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