L,S BAND POWER GaAs FET

DESCRIPTION\nThe MGF0907B, GaAs FET with an N-channel schottky gate, is designed for use in UHF band amplifiers.FEATURES\n• Class A operation\n• High output power\n   P1dB=40.0dBm(TYP.) @f=2.3GHz\n• High power gain\n   GLP=10.0dB(TYP.) @f=2.3GHz\n• High power added efficiency\n   P.A.E =37%(TYP. • Class A operation\n• High output power\n   P1dB=40.0dBm(TYP.) @f=2.3GHz\n• High power gain\n   GLP=10.0dB(TYP.) @f=2.3GHz\n• High power added efficiency\n   P.A.E =37%(TYP.) @f=2.3GHz,P1dB\n• Hermetically sealed metal-ceramic package with ceramic lidAPPLICATION\n• For UHF Band power amplifiers;

L,S BAND POWER GaAs FET

L,S BAND POWER GaAs FET?

文件：125.34 Kbytes Page：3 Pages

L,S BAND POWER GaAs FET?

文件：125.34 Kbytes Page：3 Pages

L,S BAND POWER GaAs FET?

文件：455.32 Kbytes Page：4 Pages

High-power GaAs FET (small signal gain stage)

文件：165.57 Kbytes Page：4 Pages

High-power GaAs FET (small signal gain stage)

L,S BAND POWER GaAs FET?

文件：455.32 Kbytes Page：4 Pages

High-power GaAs FET (small signal gain stage)

文件：165.57 Kbytes Page：4 Pages

3/ 6/ 9/ 12 / 15 / 18 VOICE ROM

Description The MSSnn07 is a single-chip CMOS VLSI ROM that can memorize voice data up to nn seconds using MOSEL qualified coding method (5-bit MPCM) at 6.00 KHz in 32 sections with arbitrary length. Both the volume and pitch can be masked and different for each entry each sentence. 5 versatile

9 Voice VROM

Description The MSSnn07 is a single-chip CMOS VLSI ROM that can memorize voice data up to nn seconds using MOSEL qualified coding method (5-bit MPCM) at 6.00 KHz in 32 sections with arbitrary length. Both the volume and pitch can be masked and different for each entry each sentence. 5 versatile

ECONOLINE - DC/DC - CONVERTER

文件：125.19 Kbytes Page：2 Pages