IGBT

SANKEN IGBT FGT313, FGT312, FGT412, FGT612, FGM622S, FGM603, FGM623S, MGD623N, MGD623S

Selection Guide

SANKEN IGBT FGT313, FGT312, FGT412, FGT612, FGM622S, FGM603, FGM623S, MGD623N, MGD623S

IGBT(FRD内置)

MGD623N是600V Trench型IGBT。采用了独特的垂直构造减少了寄生容量，既实现低饱和压降，又减少了开关损耗。\nIGBT的低损耗可以实现整机设备的高效率。 ・低饱和电压\n・高速开关\n・内置FRD\n・端子部无铅（符合RoHS指令）;

封装/外壳：TO-3P-3 整包 包装：卷带（TR） 描述：IGBT 600V 50A 150W TO3P 分立半导体产品 晶体管 - UGBT、MOSFET - 单

IGBT

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PNP high-voltage transistors

DESCRIPTION PNP high-voltage transistor in a SOT89 plastic package. NPN complements: BF620 and BF622. FEATURES • Low current (max. 50 mA) • High voltage (max. 300 V). APPLICATIONS • Video output stages.

32-Channel 128-Level Amplitude Gray-Shade Display Column Driver

General Description The HV623 is a 32-channel driver IC for gray shade display use. It is designed to produce varying output voltages between 3 and 80 volts. This amplitude modulation at the output is facilitated by an external ramp voltage VR. See Theory of Operation for detailed explanation. F

Silicon Rectifier Fast Recovery, Dual, Center Tap

Description: The NTE623 and NTE624 are dual, fast recovery silicon rectifiers in a TO220 type package designed for special applications such as DC power supplies, inverters, converters, ultrasonic systems, choppers and low RF interference. Features: Low Forward Voltage High Current C

8/16-Bit Micros

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3V, DUAL TRIP POINT TEMPERATURE SENSOR

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