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型号 功能描述 生产厂家 企业 LOGO 操作
MEL709D

NPN SILICON PHOTO TRANSISTOR

DESCRIPTION MEL709D is NPN silicon phototransistor with external base connection and built in a standard T-1 3/4 (5mm) light rejective epoxy package.

MICRO-ELECTRONICS

MEL709D

NPN SILICON PHOTO TRANSISTOR

MICRO-ELECTRONICS

LOW-POWER AND LOW-OFFSET-VOLTAGE TINY SINGLE C-MOS OPERATIONAL AMPLIFIER

文件:286.9 Kbytes Page:9 Pages

NJRC

日本无线

LOW-POWER AND LOW-OFFSET-VOLTAGE DUAL C-MOS OPERATIONAL AMPLIFIER?

文件:288.65 Kbytes Page:9 Pages

NJRC

日本无线

LOW-POWER AND LOW-OFFSET-VOLTAGE DUAL C-MOS OPERATIONAL AMPLIFIER?

文件:288.65 Kbytes Page:9 Pages

NJRC

日本无线

LOW-POWER AND LOW-OFFSET-VOLTAGE DUAL C-MOS OPERATIONAL AMPLIFIER?

文件:288.65 Kbytes Page:9 Pages

NJRC

日本无线

LOW-POWER AND LOW-OFFSET-VOLTAGE DUAL C-MOS OPERATIONAL AMPLIFIER?

文件:288.65 Kbytes Page:9 Pages

NJRC

日本无线

MEL709D产品属性

  • 类型

    描述

  • 型号

    MEL709D

  • 制造商

    MICRO-ELECTRONICS

  • 制造商全称

    Micro Electronics

  • 功能描述

    NPN SILICON PHOTO TRANSISTOR

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