Dual Transistors

Dual Transistors TO-78 Case (Continued)

Dual Transistors

Dual Transistors TO-78 Case (Continued)

70A MOTOROLA TYPE PRESS-FIT DIODE

Features ● Diffused Junction ● Low Leakage ● Low Cost ● High Surge Current Capability ● Typical IR less than 5.0µA

Pressfit Diodes

NPN SILICON ANNULAR MULTIPLE TRANSISTORS

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Dual Transistors

Dual Transistors TO-78 Case (Continued)

Dual Transistors

Dual Transistors TO-78 Case (Continued)

Dual Transistors

Dual Transistors TO-78 Case (Continued)

Dual Transistors

Dual Transistors TO-78 Case (Continued)

NPN SILICON ANNULAR MULTIPLE TRANSISTORS

文件：97.94 Kbytes Page：2 Pages

Trans GP BJT NPN 40V 0.03A

NPN SILICON ANNULAR MULTIPLE TRANSISTORS

文件：97.94 Kbytes Page：2 Pages

1.8GHz THREE GAIN LEVEL LNA

DESCRIPTION The STB7002 is a Silicon monolithic amplifier, that offers low noise figure and three gain levels for 1.8GHz applications. STB7002 is housed in a small industry-standard MSOP8-EP surface mount package, requiring very little board space (50 reduction vs SO8 Package). MSOP8-EP dimensi

Integrated Circuit Switched Mode Power Supply Control

Description: The NTE7002 is a bipolar integrated circuit in a 9–Lead SIP type package that drives, regulates, and monitors the switching transistor in a power supply based on the ringing choke flyback principle. Due to the wide regulating range and the high voltage stability during large loa

1.8GHz THREE GAIN LEVEL LNA

DESCRIPTION The STB7002 is a Silicon monolithic amplifier, that offers low noise figure and three gain levels for 1.8GHz applications. STB7002 is housed in a small industry-standard MSOP8-EP surface mount package, requiring very little board space (50 reduction vs SO8 Package). MSOP8-EP dimensi

LOW VOLTAGE C-MOS OPERATIONAL AMPLIFIER

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LOW VOLTAGE C-MOS OPERATIONAL AMPLIFIER

文件：182.86 Kbytes Page：6 Pages