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25A MOTOROLA TYPE PRESS-FIT DIODE

Features ● Diffused Junction ● Low Leakage ● Low Cost ● High Surge Current Capability ● Typical IR less than 5.0µA

WTE

Won-Top Electronics

25A GLASS PASSIVATED MOTOROLA TYPE PRESS-FIT DIODE

Glass Passivated Die Construction Low Leakage Low Cost High Surge Current Capability Typical IR less than 5.0μA

WTE

Won-Top Electronics

25A MOTOROLA TYPE PRESS-FIT DIODE

Features ● Diffused Junction ● Low Leakage ● Low Cost ● High Surge Current Capability ● Typical IR less than 5.0µA

WTE

Won-Top Electronics

25A GLASS PASSIVATED MOTOROLA TYPE PRESS-FIT DIODE

Glass Passivated Die Construction Low Leakage Low Cost High Surge Current Capability Typical IR less than 5.0μA

WTE

Won-Top Electronics

25A MOTOROLA TYPE PRESS-FIT DIODE

Features ● Diffused Junction ● Low Leakage ● Low Cost ● High Surge Current Capability ● Typical IR less than 5.0µA

WTE

Won-Top Electronics

25A GLASS PASSIVATED MOTOROLA TYPE PRESS-FIT DIODE

Glass Passivated Die Construction Low Leakage Low Cost High Surge Current Capability Typical IR less than 5.0μA

WTE

Won-Top Electronics

25A MOTOROLA TYPE PRESS-FIT DIODE

Features ● Diffused Junction ● Low Leakage ● Low Cost ● High Surge Current Capability ● Typical IR less than 5.0µA

WTE

Won-Top Electronics

25A GLASS PASSIVATED MOTOROLA TYPE PRESS-FIT DIODE

Glass Passivated Die Construction Low Leakage Low Cost High Surge Current Capability Typical IR less than 5.0μA

WTE

Won-Top Electronics

25A MOTOROLA TYPE PRESS-FIT DIODE

Features ● Diffused Junction ● Low Leakage ● Low Cost ● High Surge Current Capability ● Typical IR less than 5.0µA

WTE

Won-Top Electronics

25A GLASS PASSIVATED MOTOROLA TYPE PRESS-FIT DIODE

Glass Passivated Die Construction Low Leakage Low Cost High Surge Current Capability Typical IR less than 5.0μA

WTE

Won-Top Electronics

25A MOTOROLA TYPE PRESS-FIT DIODE

Features ● Diffused Junction ● Low Leakage ● Low Cost ● High Surge Current Capability ● Typical IR less than 5.0µA

WTE

Won-Top Electronics

25A GLASS PASSIVATED MOTOROLA TYPE PRESS-FIT DIODE

Glass Passivated Die Construction Low Leakage Low Cost High Surge Current Capability Typical IR less than 5.0μA

WTE

Won-Top Electronics

25A MOTOROLA TYPE PRESS-FIT DIODE

Features ● Diffused Junction ● Low Leakage ● Low Cost ● High Surge Current Capability ● Typical IR less than 5.0µA

WTE

Won-Top Electronics

25A GLASS PASSIVATED MOTOROLA TYPE PRESS-FIT DIODE

Glass Passivated Die Construction Low Leakage Low Cost High Surge Current Capability Typical IR less than 5.0μA

WTE

Won-Top Electronics

1700V/250A 2 in one-package

General Description STARPOWER MOSFET Power Module provides very low RDS(on) as well as optimized intrinsic diode. It’s designed for the applications such SMPS and DC drives. Features  SiC power MOSFET  Low RDS(on)  Optimized intrinsic reverse diode  Low inductance case avoid oscillatio

STARPOWER

斯达半导体

25A1600V Rectifier Module

Features: ◇ Glass passivated chip ◇ High thermal conductitivity insulating ceramic substrate ◇ International standardized package ◇ Low forward voltage drop ◇ Low reverse leakage current ◇ High surge current capability ◇ Lead free finish,RoHS and WEEE compliant. ◇ Good high temperature rel

LUGUANG

鲁光电子

25A MOTOROLA TYPE PRESS-FIT DIODE

文件:32.25 Kbytes Page:2 Pages

WTE

Won-Top Electronics

Pressfit Diodes

WTE

Won-Top Electronics

25A MOTOROLA TYPE PRESS-FIT DIODE

文件:32.25 Kbytes Page:2 Pages

WTE

Won-Top Electronics

25A MOTOROLA TYPE PRESS-FIT DIODE

文件:32.25 Kbytes Page:2 Pages

WTE

Won-Top Electronics

Pressfit Diodes

WTE

Won-Top Electronics

Pressfit Diodes

WTE

Won-Top Electronics

25A MOTOROLA TYPE PRESS-FIT DIODE

文件:32.25 Kbytes Page:2 Pages

WTE

Won-Top Electronics

25A MOTOROLA TYPE PRESS-FIT DIODE

文件:32.25 Kbytes Page:2 Pages

WTE

Won-Top Electronics

25A MOTOROLA TYPE PRESS-FIT DIODE

文件:32.25 Kbytes Page:2 Pages

WTE

Won-Top Electronics

25A MOTOROLA TYPE PRESS-FIT DIODE

文件:32.25 Kbytes Page:2 Pages

WTE

Won-Top Electronics

25A MOTOROLA TYPE PRESS-FIT DIODE

文件:32.25 Kbytes Page:2 Pages

WTE

Won-Top Electronics

Glass Passivated Three Phase Rectifier Bridge

文件:140.86 Kbytes Page:3 Pages

YANGJIE

扬杰电子

Glass Passivated Three Phase Rectifier Bridge

文件:93.7 Kbytes Page:3 Pages

APTSEMIJiangsu APT Semiconductor Co.,Ltd

扬杰科技扬州扬杰电子科技股份有限公司

Glass Passivated Three Phase Rectifier Bridge

文件:124.06 Kbytes Page:3 Pages

APTSEMIJiangsu APT Semiconductor Co.,Ltd

扬杰科技扬州扬杰电子科技股份有限公司

Glass Passivated Three Phase Rectifier Bridge

文件:93.7 Kbytes Page:3 Pages

APTSEMIJiangsu APT Semiconductor Co.,Ltd

扬杰科技扬州扬杰电子科技股份有限公司

Glass Passivated Three Phase Rectifier Bridge

文件:124.06 Kbytes Page:3 Pages

APTSEMIJiangsu APT Semiconductor Co.,Ltd

扬杰科技扬州扬杰电子科技股份有限公司

Glass Passivated Three Phase Rectifier Bridge

文件:93.7 Kbytes Page:3 Pages

APTSEMIJiangsu APT Semiconductor Co.,Ltd

扬杰科技扬州扬杰电子科技股份有限公司

封装/外壳:M3 包装:散装 描述:BRIDGE RECT 3PHASE 1.6KV 250A M3 分立半导体产品 二极管 - 桥式整流器

MCC

Glass Passivated Three Phase Rectifier Bridge

文件:124.06 Kbytes Page:3 Pages

APTSEMIJiangsu APT Semiconductor Co.,Ltd

扬杰科技扬州扬杰电子科技股份有限公司

封装/外壳:M5 模块 包装:托盘 描述:BRIDGE RECT 3PHASE 1.6KV 250A 分立半导体产品 二极管 - 桥式整流器

MCC

Glass Passivated Three Phase Rectifier Bridge

文件:93.7 Kbytes Page:3 Pages

APTSEMIJiangsu APT Semiconductor Co.,Ltd

扬杰科技扬州扬杰电子科技股份有限公司

Glass Passivated Three Phase Rectifier Bridge

文件:124.06 Kbytes Page:3 Pages

APTSEMIJiangsu APT Semiconductor Co.,Ltd

扬杰科技扬州扬杰电子科技股份有限公司

MD25产品属性

  • 类型

    描述

  • Product Type:

    Automotive

  • Package Group:

    Pressfit

  • Package:

    13mm Motorola

  • IF(AV)(A):

    25

  • VRRM(V):

    50

  • VF @ IF(V):

    1.0 @ 25A

  • IR @ VR(µA):

    5.0 @ 50V

  • IFSM(A):

    300

  • Compliance:

    RoHS Pb-freeHalogen-free*

更新时间:2026-8-4 11:31:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
DIODES(美台)
25+
SMD5032-4P
6895
正规渠道,免费送样。支持账期,BOM一站式配齐
DIODES(美台)
25+
SMD5032-4P
6843
样件支持,可原厂排单订货!
26+
N/A
64000
一级代理-主营优势-实惠价格-不悔选择

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