isc Silicon NPN Power Transistor

DESCRIPTION • High Voltage • Low base-drive requirements • Collector-Emitter Sustaining Voltage- : VCEO(SUS)= 700V (Min) APPLICATIONS • Horizontal deflection output for TV

Silicon NPN Power Transistor

DESCRIPTION · High Voltage · Low base-drive requirements · Collector-Emitter Sustaining Voltage- :VCEO(SUS)= 700V (Min) APPLICATIONS · Horizontal deflection output for TV

High voltage NPN Power transistor for standard definition CRT display

Description The MD1803DFX is manufactured using Diffused Collector in Planar Technology adopting new and enhanced high voltage structure. The new MD product series show improved silicon efficiency bringing updated performance to the Horizontal Deflection stage. Features ■ State-of-the-art tech

High voltage NPN Power transistor for standard Definition CRT display

Description The MD1803DFX is manufactured using Diffused Collector in Planar Technology adopting new and enhanced high voltage structure. The new MD product series show improved silicon efficiency bringing updated performance to the Horizontal Deflection stage. Features ■ State-of-the-art tech

标清CRT显示器的高压NPN功率晶体管

The MD1803DFX is manufactured using Diffused Collector in Planar Technology adopting new and enhanced high voltage structure. The new MD product series show improved silicon efficiency bringing updated performance to the Horizontal Deflection stage. • In compliance with the 2002/93/EC european directive \n• Integrated free wheeling diode \n• State-of-the-art technology:\tDiffused collector “enhanced generation”\t\t \n• Low base drive requirement \n• More stable performance versus operating temperature variation \n• Fully insulated power package;

封装/外壳：TO-3P-3 整包 包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 描述：TRANS NPN 700V 10A TO3PF 分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个

High voltage NPN Power transistor for standard Definition CRT display

Description The MD1803DFX is manufactured using Diffused Collector in Planar Technology adopting new and enhanced high voltage structure. The new MD product series show improved silicon efficiency bringing updated performance to the Horizontal Deflection stage. Features ■ State-of-the-art tech

1.8 GHz UPMIXER, EXCITER AND LO AMP GaAs MONOLITHIC INTEGRATED CIRCUIT

Designed primarily for use in DECT, Japan’s Personal Handy System (PHS), and other wireless Personal Communication Systems (PCS) applications at 1.8 GHz, but also applicable to Industrial, Scientific and Medical (ISM) applications at 2.5 GHz. The MRFIC1803 is a complete active upmixer, exciter amp

Integrated Circuit Stereo Audio Control

Description: The NTE1803 is an linear integrated circuit in a 18–Lead DIP type package designed as an active stereo tone/volume control for car radios, TV receivers, and audio equipment. It includes functions for bass and treble control, volume control with built–in contour (can be switched off

HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR

DESCRIPTION The ST1803DHI is manufactured using Diffused Collector technology for more stable operation Vs base drive circuit variations resulting in very low worst case dissipation. ■ NEW SERIES, ENHANCED PERFORMANCE ■ FULLY INSULATED PACKAGE (U.L. COMPLIANT) FOR EASY MOUNTING ■ INTEGRATED FR

HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR

DESCRIPTION The ST1803DHI is manufactured using Diffused Collector technology for more stable operation Vs base drive circuit variations resulting in very low worst case dissipation. ■ NEW SERIES, ENHANCED PERFORMANCE ■ FULLY INSULATED PACKAGE (U.L. COMPLIANT) FOR EASY MOUNTING ■ INTEGRATED FR

N-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING

DESCRIPTION The µPA1803 is a switching device which can be driven directly by a 4.5-V power source. The µPA1803 features a low on-state resistance and excellent switching characteristics, and is suitable for applications such as power switch of portable machine and so on. FEATURES