2 Watts 2:1 Wide Input Range SIP DC/DC Converter

The MINMAX MCW1000 series is a range of isolated 2W DC-DC converter modules featuring fully regulated output and wide 2:1 input voltage ranges.The product comes in a SIP-8 package with a very small footprint occupying only 2.0 cm2 (0.3 square in.) on the PCB.An excellent efficiency allows an operati • 工业标准SIP-8包装\n\n• 2:1宽输入电压范围\n\n• 全稳压输出\n\n• 隔离耐压1000VDC\n\n• 工作环境温度范围：-40℃至+85℃\n\n• 具备输入低电压、输出过电流、输出短路保护机制\n\n• 具备遥控开关功能\n\n• 通过国际安规UL/cUL/IEC/EN 62368-1(60950-1)认证;

DC/DC CONVERTER 2W High Power Density in SIP-8 Package

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2 Watts 2 :1 Wide Input Range DC/DC Converters Single Outputs

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High Power Density in SIP-8 Package

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FOR OPTICAL INFORMATION SYSTEM?

DESCRIPTION ML1XX3 is a high power AlGaInP semiconductor laser which provides a stable, single transverse mode oscillation with emission wavelength of 685-nm and standard CW light output of 50mW. ML1XX3 has a window-mirror-facet which improves the maximum output power. That leads to highly relia

FOR OPTICAL INFORMATION SYSTEM?

DESCRIPTION ML1XX3 is a high power AlGaInP semiconductor laser which provides a stable, single transverse mode oscillation with emission wavelength of 685-nm and standard CW light output of 50mW. ML1XX3 has a window-mirror-facet which improves the maximum output power. That leads to highly relia

N-channel enhancement mode MOS transistor

DESCRIPTION N-channel enhancement mode logic level field-effect power transistor using ‘trench’ technology, in an 8-pin plastic SOT96-1 (SO8) package. FEATURES • Very low on-state resistance. APPLICATIONS • DC to DC converters • General purpose switching applications.

VTB Process Photodiodes

PRODUCT DESCRIPTION Small area planar silicon photodiode in a “flat” window, dual lead TO-46 package. The package incorporates an infrared rejection filter. Cathode is common to the case. These diodes have very high shunt resistance and have good blue response.

GaAs Infrared Emitting Diodes

DESCRIPTION This wide beam angle TO-46 hermetic emitter contains a large area, double wirebonded, GaAs, 940 nm IRED chip suitable for higher current pulse applications.