AlGaAs LED/ Phototransistor Optocoupler

DESCRIPTION The MCT5210/5211 are optocouplers with a high efficiency AlGaAs LED optically coupled to a NPN phototransistor. The high performance LED makes operation at low input currents practical. The coupler is housed in a double molded, six pin DIP package. Isolation test voltage is 5300 VACRM

LOW INPUT CURRENT PHOTOTRANSISTOR OPTOCOUPLERS

Description The MCT52XX series consists of a high-efficiency AlGaAs, infrared emitting diode, coupled with an NPN phototransistor in a six pin dual-in-line package. The MCT52XX is well suited for CMOS to LSTT/TTL interfaces, offering 250 CTRCE(SAT) with 1 mA of LED input current. When an LED inp

Optocoupler, Phototransistor Output, Low Input Current, With Base Connection

DESCRIPTION The MCT521/5211 are optocouplers with a high efficiency AIGaAs LED optically coupled toa NPN phototransistor. The high performance LED makes operation at low input currents practical. The coupler is housed in a six pin DIP package. Isolation test voltage is 5300 VRMS. Because these pa

Optocoupler, Phototransistor Output, Low Input Current, with Base Connection

·Saturation CTR - MCT5211, > 100 % at IF = 1.6 mA\n·High isolation voltage, 5300 VRMS\n·Compliant to RoHS Directive 2002/95/EC and in accordance to WEEE 2002/96/EC;

AlGaAs LED/Phototransistor Optocoupler

DESCRIPTION\nThe MCT5210/5211 are optocouplers with a high efficiency AlGaAs LED optically coupled to a NPN phototransistor. The high performance LED makes operation at low input currents practical. The coupler is housed in a double molded, six pin DIP package. Isolation test voltage is 5300 VRMS.\n • Current Transfer Ratio\n   MCT5210, 70% at IF=3.0 mA\n   MCT5211, 110% at IF=1.0 mA\n• Saturation CTR–MCT5211, 100% at IF=1.6 mA\n• High Isolation Voltage, 5300 VRMS\n• Underwriters Lab File #E52744\n• VDE #0884 Available with Option 1;

HIGH-PERFORMANCE AIGAAS PHOTOTRANSISTOR OPTOCOUPLERS

HIGH-PERFORMANCE AIGAAS PHOTOTRANSISTOR OPTOCOUPLERS

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Low Input Current Phototransistor Optocouplers

Description The MCT52XXM series consists of a high-efficiency AlGaAs, infrared emitting diode, coupled with an NPN phototransistor in a six pin dual-in-line package. The MCT52XXM is well suited for CMOS to LSTT/TTL interfaces, offering 250 CTRCE(SAT) with 1mA of LED input current. When an LED in

Optocoupler, Phototransistor Output, Low Input Current, With Base Connection

DESCRIPTION The MCT521/5211 are optocouplers with a high efficiency AIGaAs LED optically coupled toa NPN phototransistor. The high performance LED makes operation at low input currents practical. The coupler is housed in a six pin DIP package. Isolation test voltage is 5300 VRMS. Because these pa

Optocoupler, Phototransistor Output, Low Input Current, With Base Connection

DESCRIPTION The MCT521/5211 are optocouplers with a high efficiency AIGaAs LED optically coupled toa NPN phototransistor. The high performance LED makes operation at low input currents practical. The coupler is housed in a six pin DIP package. Isolation test voltage is 5300 VRMS. Because these pa

Low Input Current Phototransistor Optocouplers

文件：293.2 Kbytes Page：12 Pages

封装/外壳：6-SMD，鸥翼 包装：管件 描述：OPTOISO 5.3KV TRANS W/BASE 6SMD 隔离器 光隔离器 - 晶体管，光电输出

封装/外壳：6-SMD，鸥翼 包装：管件 描述：OPTOISO 5.3KV TRANS W/BASE 6SMD 隔离器 光隔离器 - 晶体管，光电输出

K-Band 2-Stage Power Amplifier

DESCRIPTION The MGFC5211 is a GaAs MMIC chip especially designed for 21.2 ~ 23.6 GHz band High Power Amplifier (HPA) . FEATURES ● RF frequency : 21.2 to 23.6 GHz ● Linear gain : ³ 13 dB ● P1dB : ³ 23 dBm ● DC power : Vd = 5 V, Id1 + Id2 = 270 mA

Dual Bias Resistor Trasnsistors

Dual Bias Resistor Trasnsistors NPN Silicon Surface Mount Transistors with Monolithic Bias Resistor Network The BRT (Bias Resistor Transistor) contains a single transistor with a monolithic bias network consisting of two resistors; a series base resistor and a base–emitter resistor. These digit

Transimpedance amplifier 180MHz

Description The SA5211 is a 28 kΩtransimpedance, wide-band, low noise amplifier with differential outputs, particularly suitable for signal recovery in fiber optic receivers. The part is ideally suited for many other RF applications as a general purpose gain block. Features ■Extremely l

Transimpedance amplifier 180MHz

Description The SA5211 is a 28 kΩtransimpedance, wide-band, low noise amplifier with differential outputs, particularly suitable for signal recovery in fiber optic receivers. The part is ideally suited for many other RF applications as a general purpose gain block. Features ■Extremely l

Silicon NPN epitaxial planer transistor

Silicon NPN epitaxial planar type ​​​​​​​ For digital circuits ■ Features • Costs can be reduced through downsizing of the equipment and reduction of the number of parts • S-Mini type package, allowing automatic insertion through the tape packing and magazine packing