PHOTON COUPLED ISOLATOR

GaAs Infrared Emitting Diode & Light Activated SCR The GE Solid State MCS21 and MCS2401 consist of a gallium arsenide, infrared emitting diode coupled with a light activated silicon controlled rectifier in a dual-in-line package. These devices are also available in Surface-Mount packaging.

2.4 GHz DOWNCONVERTER GaAs MONOLITHIC INTEGRATED CIRCUIT

The MRFIC2401 is a GaAs low–noise amplifier and downmixer in a low–cost 16 lead plastic package designed for use in the 2.4 to 2.5 GHz Industrial– Scientific–Medical (ISM) band. The design is optimized for efficiency at 5.0 Volt operation at 2.45 GHz but is usable from 2.0 to 3.0 GHz in applicatio

Silicon PNP Transistor RF Stages in FM Front Ends

Description: The NTE2401 is a silicon PNP transistor in a plastic SOT–23 type surface mount package designed for use in RF stages in FM front–ends in common base configuration for SMD applications.

Silicon PNP epitaxial planer transistor

Silicon PNP epitaxial planer transistor For general amplification ■ Features ● Two elements incorporated into one package. (Base-coupled transistors) ● Reduction of the mounting area and assembly cost by one half.

Silicon PNP epitaxial planer transistor

Silicon PNP epitaxial planar type For general amplification ■ Features • Two elements incorporated into one package (Base-coupled transistors) • Reduction of the mounting area and assembly cost by one half

FAMILY OF 900-nA/Ch RAIL-TO-RAIL INPUT/OUTPUT OPERATIONAL AMPLIFIERS WITH REVERSE BATTERY PROTECTION

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