SILICON CONTROLLED RECTIFIERS

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Silicon Controlled Rectifiers

文件：86.47 Kbytes Page：2 Pages

Silicon Controlled Rectifiers

SILICON CONTROLLED RECTIFIERS

文件：76.55 Kbytes Page：2 Pages

SILICON CONTROLLED RECTIFIERS

文件：76.55 Kbytes Page：2 Pages

SILICON CONTROLLED RECTIFIERS

文件：76.55 Kbytes Page：2 Pages

SILICON CONTROLLED RECTIFIERS

文件：76.55 Kbytes Page：2 Pages

Positive Center Tapped Silicon Recitifers 30 Amp(15A per diode)

Features: Available in Standard (NTE6200 & NTE6202) and Fast (NTE6206 thru NTE6210) Recovery 250 Amps Peak One Half Cycle Surge Current Fast Recovery Types: trr= 200ns Max TO3 Type Package

8-BIT MCUs WITH A/D CONVERTER, TWO TIMERS, OSCILLATOR SAFEGUARD & SAFE RESET

INTRODUCTION The ST6200C, 01C and 03C devices are low cost members of the ST62xx 8-bit HCMOS family of microcontrollers, which is targeted at low to medium complexity applications. All ST62xx devices are based on a building block approach: a common core is surrounded by a number of on-chip periph

8-BIT MCUs WITH A/D CONVERTER, TWO TIMERS, OSCILLATOR SAFEGUARD & SAFE RESET

INTRODUCTION The ST6200C, 01C and 03C devices are low cost members of the ST62xx 8-bit HCMOS family of microcontrollers, which is targeted at low to medium complexity applications. All ST62xx devices are based on a building block approach: a common core is surrounded by a number of on-chip periph

LOW VOLTAGE 8-BIT ROM MCUs WITH A/D CONVERTER,AND 16 PINS

INTRODUCTION The ST6200C, 01C and 03C devices are low cost members of the ST62xx 8-bit HCMOS family of microcontrollers, which is targeted at low to medium complexity applications. All ST62xx devices are based on a building block approach: a common core is surrounded by a number of on-chip periph

GaAs/GaAlAs IR Emitting Diode in 짰5 mm (T-13/4) Package

DESCRIPTION TSAL6200 is an infrared, 940 nm emitting diode in GaAlAs multi quantum well (MQW) technology with high radiant power and high speed molded in a blue-gray plastic package. FEATURES • Package type: leaded • Package form: T-1¾ • Dimensions (in mm): Ø 5 • Peak wavelength: λp = 940 nm