位置:首页 > IC中文资料第9875页 > MCH6412
| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
MCH6412 | N-Channel Silicon MOSFET General-Purpose Switching Device Applications General-Purpose Switching Device Applications Features • Low ON-resistance. • 1.8V drive. | SANYO 三洋 | ||
MCH6412 | N-Channel Silicon MOSFET General-Purpose Switching Device Applications | ONSEMI 安森美半导体 | ||
Triple Output, Low-Noise LDO Regulator with Integrated Reset Circuit The ISL6412 is an ultra low noise triple output LDO regulator with microprocessor reset circuit and is optimized for powering wireless chip sets. Features • Small DC/DC Converter Size - Three LDOs and Reset Circuitry in a Low-Profile 4x4mm QFN Package • High Output Current - LDO1, 1.8 | INTERSIL | |||
Triple Output, Low-Noise LDO Regulator with Integrated Reset Circuit The ISL6412 is an ultra low noise triple output LDO regulator with microprocessor reset circuit and is optimized for powering wireless chip sets. Features • Small DC/DC Converter Size - Three LDOs and Reset Circuitry in a Low-Profile 4x4mm QFN Package • High Output Current - LDO1, 1.8 | INTERSIL | |||
Triple Output, Low-Noise LDO Regulator with Integrated Reset Circuit The ISL6412 is an ultra low noise triple output LDO regulator with microprocessor reset circuit and is optimized for powering wireless chip sets. Features • Small DC/DC Converter Size - Three LDOs and Reset Circuitry in a Low-Profile 4x4mm QFN Package • High Output Current - LDO1, 1.8 | INTERSIL | |||
Triple Output, Low-Noise LDO Regulator with Integrated Reset Circuit The ISL6412 is an ultra low noise triple output LDO regulator with microprocessor reset circuit and is optimized for powering wireless chip sets. Features • Small DC/DC Converter Size - Three LDOs and Reset Circuitry in a Low-Profile 4x4mm QFN Package • High Output Current - LDO1, 1.8 | INTERSIL | |||
Bilateral Trigger Diodes (DIACS) Description: The NTE6407 thru NTE6412 are bilateral trigger DIACs offering a range of voltage characteristics from 28V to 63V. These devices are triggered from a blocking–to–conduction state for either polarity of applied voltage whenever the amplitude of applied voltage exceeds the breakover v | NTE |
MCH6412产品属性
- 类型
描述
- 型号
MCH6412
- 制造商
SANYO
- 制造商全称
Sanyo Semicon Device
- 功能描述
N-Channel Silicon MOSFET General-Purpose Switching Device Applications
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
SANYO/三洋 |
26+ |
6-MCPH |
50000 |
芯为深仓现货 |
|||
三年内 |
1983 |
只做原装正品 |
|||||
SANYO |
25+ |
NA |
2566 |
专做原装正品,假一罚百! |
|||
SANYO |
25+23+ |
New |
31118 |
绝对原装正品现货,全新深圳原装进口现货 |
|||
SANYO |
1725+ |
? |
6500 |
只做原装进口,假一罚十 |
MCH6412规格书下载地址
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DdatasheetPDF页码索引
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