N-ChannelEnhancementModeFieldEffectTransistor

Features: ●LowGateChargeforFastSwitchingApplication ●LowRDS(ON)toMinimizeConductiveLoss ●100%EASGuaranteed ●OptimizedV(BR)DSSRuggedness ●Lead-Free,RoHSCompliant Description: TheADM90N10QusesadvancedtrenchtechnologyanddesigntoprovideexcellentRDS(ON)with

N-ChannelMOSFETTransistor

FEATURES ·DrainCurrent-ID=105A@TC=25℃ ·DrainSourceVoltage-VDSS=100V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=10mΩ(Max)@VGS=10V APPLICATIONS ·SwitchModePowerSupply(SMPS) ·UninterruptiblePowerSupply(UPS) ·PowerFactorCorrection(PFC)

N-CHANNELMOSFET

APPLICATIONS HighpowerDC/DC convertersandswitch modepowersupplies DCmotorcontrol Automotiveapplications Uninterruptiblepower supply FEATURES Lowgatecharge LowRdson Fastswitching 100%avalanchetested Improveddv/dtcapability RoHSproduct

N-CHANNELMOSFET

APPLICATIONS HighpowerDC/DC convertersandswitch modepowersupplies DCmotorcontrol Automotiveapplications Uninterruptiblepower supply FEATURES Lowgatecharge LowRdson Fastswitching 100%avalanchetested Improveddv/dtcapability RoHSproduct

N-ChannelSuperTrenchIIPowerMOSFET

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