Octal D-Type Flip-Flop with 3-State Output

The MC74VHC374 is an advanced high speed CMOS octal flip–flip with 3–state output fabricated with silicon gate CMOS technology. It achieves high speed operation similar to equivalent Bipolar Schottky TTL while maintaining CMOS low power dissipation. • High Speed: fmax = 185MHz (Typ) at VCC =

Octal D?뭈ype Flip?묯lop with 3?뭆tate Output

The MC74VHC374 is an advanced high speed CMOS octal flip−flip with 3−state output fabricated with silicon gate CMOS technology. It achieves high speed operation similar to equivalent Bipolar Schottky TTL while maintaining CMOS low power dissipation. • High Speed: fmax = 185MHz (Typ) at VCC =

Octal D-Type Flip-Flop with 3-State Output

文件：151.73 Kbytes Page：9 Pages

封装/外壳：20-SOIC（0.209"，5.30mm 宽） 功能：标准 包装：卷带（TR） 描述：IC FF D-TYPE SNGL 8BIT 20SOEIAJ 集成电路（IC） 触发器

Octal D-Type Flip-Flop with 3-State Output

The MC74VHC374 is an advanced high speed CMOS octal flip–flip with 3–state output fabricated with silicon gate CMOS technology. It achieves high speed operation similar to equivalent Bipolar Schottky TTL while maintaining CMOS low power dissipation. • High Speed: fmax = 185MHz (Typ) at VCC =

Octal D-Type Flip-Flop with 3-State Output

The MC74VHC374 is an advanced high speed CMOS octal flip–flip with 3–state output fabricated with silicon gate CMOS technology. It achieves high speed operation similar to equivalent Bipolar Schottky TTL while maintaining CMOS low power dissipation. • High Speed: fmax = 185MHz (Typ) at VCC =

OCTAL D-TYPE FLIP FLOP WITH 3 STATE OUTPUT NON INVERTING

DESCRIPTION The 74VHC374 is an advanced high-speed CMOS OCTAL D-TYPE FLIP FLOP with 3 STATE OUTPUTS NON INVERTING fabricated with sub-micron silicon gate and double-layer metal wiring C2MOS technology. ■ HIGH SPEED: fMAX = 270 MHz (TYP.) at VCC = 5V ■ LOW POWER DISSIPATION: ICC = 4 µA (MAX.) at

OCTAL D-TYPE FLIP FLOP WITH 3 STATE OUTPUT NON INVERTING

DESCRIPTION The 74VHC374 is an advanced high-speed CMOS OCTAL D-TYPE FLIP FLOP with 3 STATE OUTPUTS NON INVERTING fabricated with sub-micron silicon gate and double-layer metal wiring C2MOS technology. ■ HIGH SPEED: fMAX = 270 MHz (TYP.) at VCC = 5V ■ LOW POWER DISSIPATION: ICC = 4 µA (MAX.) at