Quad 2?묲nput NAND Gate

Features • Output Drive Capability: 24 mA • Operating Voltage Range: 2 to 6 V AC00; 4.5 to 5.5 ACT00 • Low Input Current: 1.0㎂ • High Noise Immunity Characteristic of CMOS Devices • In Compliance With the JEDEC Standard No. 7A Requirements • Chip Complexity: 32 FETs • Pb−Free Packages are A

Quad 2?묲nput NAND Gate

Features • Output Drive Capability: 24 mA • Operating Voltage Range: 2 to 6 V AC00; 4.5 to 5.5 ACT00 • Low Input Current: 1.0㎂ • High Noise Immunity Characteristic of CMOS Devices • In Compliance With the JEDEC Standard No. 7A Requirements • Chip Complexity: 32 FETs • Pb−Free Packages are A

封装/外壳：14-SOIC（0.209"，5.30mm 宽） 包装：卷带（TR） 描述：IC GATE NAND 4CH 2-INP SOEIAJ-14 集成电路（IC） 门和反相器

QUAD 2-INPUT NAND GATE

QUAD 2-INPUT NAND GATE • Outputs Source/Sink 24 mA • ′ACT00 Has TTL Compatible Inputs

QUAD 2-INPUT NAND GATE

QUAD 2-INPUT NAND GATE • Outputs Source/Sink 24 mA • ′ACT00 Has TTL Compatible Inputs

QUAD 2-INPUT NAND GATE

QUAD 2-INPUT NAND GATE • Outputs Source/Sink 24 mA • ′ACT00 Has TTL Compatible Inputs

QUAD 2-INPUT NAND GATE

DESCRIPTION The ACT00 is an advanced high-speed CMOS QUAD 2-INPUT NAND GATE fabricated with sub-micron silicon gate and double-layer metal wiring C2MOS technology. It is ideal for low power applications mantaining high speed operation similar to equivalent Bipolar Schottky TTL. ■ HIGH SPEED: tPD

QUAD 2-INPUT NAND GATE

DESCRIPTION The ACT00 is an advanced high-speed CMOS QUAD 2-INPUT NAND GATE fabricated with sub-micron silicon gate and double-layer metal wiring C2MOS technology. It is ideal for low power applications mantaining high speed operation similar to equivalent Bipolar Schottky TTL. ■ HIGH SPEED: tPD