EXPANDABLE 3-WIDE 3-INPUT AND-OR-INVERT GATE

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Electrical Specification for Pulse and Direction Motion Control

[Performance Motion Devices, Inc.] Introduction This manual describes the operational characteristics of the MC55000 Series Motion Processors from PMD. These devices are members of PMD’s third-generation motion processor family. Each of these devices is a complete chip-based motion proc

Electrical Specification for Pulse and Direction Motion Control

[Performance Motion Devices, Inc.] Introduction This manual describes the operational characteristics of the MC55000 Series Motion Processors from PMD. These devices are members of PMD’s third-generation motion processor family. Each of these devices is a complete chip-based motion proc

Magellan Motion Processor

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Magellan Motion Processor

文件：443.83 Kbytes Page：50 Pages

Magellan Motion Processor

文件：443.83 Kbytes Page：50 Pages

NPN Silicon RF Transistor (For general small-signal RF applications up to 300 MHz in amplifier, mixer and oscillator circuits)

NPN Silicon RF Transistor ● For general small-signal RF applications up to 300 MHz in amplifier, mixer and oscillator circuits

Surface mount Si-Epitaxial PlanarTransistors

Surface mount Si-Epitaxial PlanarTransistors • Power dissipation 250 mW • Plastic case SOT-23 • Weight approx. 0.01 g • Plastic material has UL classification 94V-0 • Standard packaging taped and reeled

SURFACE MOUNT SILICON ZENER DIODES

VZ : 3.9 - 200 Volts PD : 3 Watts FEATURES : * Complete Voltage Range 3.9 to 200 Volts * High peak reverse power dissipation * High reliability * Low leakage current * Pb / RoHS Free

SURFACE MOUNT SILICON ZENER DIODES

VZ : 3.9 - 200 Volts PD : 3 Watts FEATURES : * Complete Voltage Range 3.9 to 200 Volts * High peak reverse power dissipation * High reliability * Low leakage current * Pb / RoHS Free

PNP SILICON PLANAR MEDIUM POWER TRANSISTORS

FEATURES * 150 Volt VCEO * 1 Amp continuous current * Ptot= 1 Watt