B-Suffix Series CMOS Gates

TheB Series logic gates are constructed with P and N channel enhancementmode devices in a single monolithic structure (Complementary MOS). Their primary use is where low power dissipation and/or high noise immunity is desired. 1. Supply Voltage Range = 3.0 Vdc to 18 Vdc 2. All Outputs Buffered

B-Suffix Series CMOS Gates

B-Suffix Series CMOS Gates The B Series logic gates are constructed with P and N channel enhancement mode devices in a single monolithic structure (Complementary MOS). Their primary use is where low power dissipation and/or high noise immunity is desired. Features • Supply Voltage Range = 3.0 V

B-SUFFIX SERIES CMOS GATES

文件：134.49 Kbytes Page：12 Pages

B-Suffix Series CMOS Gates

B-Suffix Series CMOS Gates The B Series logic gates are constructed with P and N channel enhancement mode devices in a single monolithic structure (Complementary MOS). Their primary use is where low power dissipation and/or high noise immunity is desired. Features • Supply Voltage Range = 3.0 V

B-Suffix Series CMOS Gates

B-Suffix Series CMOS Gates The B Series logic gates are constructed with P and N channel enhancement mode devices in a single monolithic structure (Complementary MOS). Their primary use is where low power dissipation and/or high noise immunity is desired. Features • Supply Voltage Range = 3.0 V

B-Suffix Series CMOS Gates

B-Suffix Series CMOS Gates The B Series logic gates are constructed with P and N channel enhancement mode devices in a single monolithic structure (Complementary MOS). Their primary use is where low power dissipation and/or high noise immunity is desired. Features • Supply Voltage Range = 3.0 V

B-Suffix Series CMOS Gates

B-Suffix Series CMOS Gates The B Series logic gates are constructed with P and N channel enhancement mode devices in a single monolithic structure (Complementary MOS). Their primary use is where low power dissipation and/or high noise immunity is desired. Features • Supply Voltage Range = 3.0 V

B-Suffix Series CMOS Gates

B-Suffix Series CMOS Gates The B Series logic gates are constructed with P and N channel enhancement mode devices in a single monolithic structure (Complementary MOS). Their primary use is where low power dissipation and/or high noise immunity is desired. Features • Supply Voltage Range = 3.0 V

B-Suffix Series CMOS Gates

文件：135.47 Kbytes Page：11 Pages

B-SUFFIX SERIES CMOS GATES

文件：134.49 Kbytes Page：12 Pages

B-SUFFIX SERIES CMOS GATES

文件：134.49 Kbytes Page：12 Pages

B-SUFFIX SERIES CMOS GATES

文件：134.49 Kbytes Page：12 Pages

B-Suffix Series CMOS Gates

文件：135.47 Kbytes Page：11 Pages

封装/外壳：14-SOIC（0.154"，3.90mm 宽） 包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 描述：IC GATE AND 4CH 2-INP 14SOIC 集成电路（IC） 门和反相器

封装/外壳：14-TSSOP（0.173"，4.40mm 宽） 包装：管件 描述：IC GATE AND 4CH 2-INP 14TSSOP 集成电路（IC） 门和反相器

B-SUFFIX SERIES CMOS GATES

文件：134.49 Kbytes Page：12 Pages

B-Suffix Series CMOS Gates

文件：135.47 Kbytes Page：11 Pages

B-Suffix Series CMOS Gates

B-Suffix Series CMOS Gates The B Series logic gates are constructed with P and N channel enhancement mode devices in a single monolithic structure (Complementary MOS). Their primary use is where low power dissipation and/or high noise immunity is desired. Features • Supply Voltage Range = 3.0 V

B-Suffix Series CMOS Gates

B-Suffix Series CMOS Gates The B Series logic gates are constructed with P and N channel enhancement mode devices in a single monolithic structure (Complementary MOS). Their primary use is where low power dissipation and/or high noise immunity is desired. Features • Supply Voltage Range = 3.0 V

B-SUFFIX SERIES CMOS GATES

文件：134.49 Kbytes Page：12 Pages

Quadruple 2-input AND Gate

FEATURES ● Quiescent Current = 0.5nA typ/pkg @5V ● Noise Immunity = 45 of VDD typ ● Capable of Driving One Low-power Schottky TTL load Over the Rated Temperature Range ● Pin-for Pin Replacements for CD4081B and MC14081B Series