Hex Inverter

The MC14069UB hex inverter is constructed with MOS P–channel and N–channel enhancement mode devices in a single monolithic structure. These inverters find primary use where low power dissipation and/or high noise immunity is desired. Each of the six inverters is a single stage to minimize propagat

Hex Inverter

The MC14069UB hex inverter is constructed with MOS P–channel and N–channel enhancement mode devices in a single monolithic structure. These inverters find primary use where low power dissipation and/or high noise immunity is desired. Each of the six inverters is a single stage to minimize propagat

Hex Inverter

文件：145.23 Kbytes Page：7 Pages

封装/外壳：14-SOIC（0.209"，5.30mm 宽） 包装：管件 描述：IC INVERTER 6CH 1-INP SOEIAJ-14 集成电路（IC） 门和反相器

Hex Inverter

文件：145.23 Kbytes Page：7 Pages

Hex Inverter

文件：135.52 Kbytes Page：7 Pages

Hex Inverter

文件：115.69 Kbytes Page：6 Pages

封装/外壳：14-SOIC（0.209"，5.30mm 宽） 包装：管件 描述：IC INVERTER 6CH 1-INP SOEIAJ-14 集成电路（IC） 门和反相器

Hex Inverter

The MC14069UB hex inverter is constructed with MOS P–channel and N–channel enhancement mode devices in a single monolithic structure. These inverters find primary use where low power dissipation and/or high noise immunity is desired. Each of the six inverters is a single stage to minimize propagat

Hex Inverter

The MC14069UB hex inverter is constructed with MOS P–channel and N–channel enhancement mode devices in a single monolithic structure. These inverters find primary use where low power dissipation and/or high noise immunity is desired. Each of the six inverters is a single stage to minimize propagat

Hex Inverter

The MC14069UB hex inverter is constructed with MOS P–channel and N–channel enhancement mode devices in a single monolithic structure. These inverters find primary use where low power dissipation and/or high noise immunity is desired. Each of the six inverters is a single stage to minimize propagat