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MC14050价格

参考价格:¥7.6690

型号:MC14050BCP 品牌: 备注:这里有MC14050多少钱,2026年最近7天走势,今日出价,今日竞价,MC14050批发/采购报价,MC14050行情走势销售排行榜,MC14050报价。
型号 功能描述 生产厂家 企业 LOGO 操作

Hex Buffer

The MC14049B Hex Inverter/Buffer and MC14050B Noninverting Hex Buffer are constructed with MOS P–Channel and N–Channel enhancement mode devices in a single monolithic structure. These complementary MOS devices find primary use where low power dissipation and/or high noise immunity is desired. Thes

ONSEMI

安森美半导体

Hex Buffer

The MC14049B Hex Inverter/Buffer and MC14050B Noninverting Hex Buffer are constructed with MOS P−Channel and N−Channel enhancement mode devices in a single monolithic structure. These complementary MOS devices find primary use where low power dissipation and/or high noise immunity is desired.

ONSEMI

安森美半导体

六路缓冲器

The MC14049B Hex Inverter/Buffer and MC14050B Noninverting Hex Buffer are constructed with MOS P-Channel and N-Channel enhancement mode devices in a single monolithic structure. These complementary MOS devices find primary use where low power dissipation and/or high noise immunity is desired. These • High Source and Sink Currents\n• High-to-Low Level Converter\n• Supply Voltage Range = 3.0 V to 18 V\n• VIN can exceed VDD\n• Meets JEDEC B Specifications\n• Improved ESD Protection On All Inputs\n• Pb-Free Packages are Available*;

ONSEMI

安森美半导体

Hex Buffer

The MC14049B Hex Inverter/Buffer and MC14050B Noninverting Hex Buffer are constructed with MOS P–Channel and N–Channel enhancement mode devices in a single monolithic structure. These complementary MOS devices find primary use where low power dissipation and/or high noise immunity is desired. Thes

ONSEMI

安森美半导体

Hex Buffer

The MC14049B Hex Inverter/Buffer and MC14050B Noninverting Hex Buffer are constructed with MOS P–Channel and N–Channel enhancement mode devices in a single monolithic structure. These complementary MOS devices find primary use where low power dissipation and/or high noise immunity is desired. Thes

ONSEMI

安森美半导体

Hex Buffer

The MC14049B Hex Inverter/Buffer and MC14050B Noninverting Hex Buffer are constructed with MOS P–Channel and N–Channel enhancement mode devices in a single monolithic structure. These complementary MOS devices find primary use where low power dissipation and/or high noise immunity is desired. Thes

ONSEMI

安森美半导体

Hex Buffer

The MC14049B Hex Inverter/Buffer and MC14050B Noninverting Hex Buffer are constructed with MOS P−Channel and N−Channel enhancement mode devices in a single monolithic structure. These complementary MOS devices find primary use where low power dissipation and/or high noise immunity is desired.

ONSEMI

安森美半导体

Hex Buffer

The MC14049B Hex Inverter/Buffer and MC14050B Noninverting Hex Buffer are constructed with MOS P–Channel and N–Channel enhancement mode devices in a single monolithic structure. These complementary MOS devices find primary use where low power dissipation and/or high noise immunity is desired. Thes

ONSEMI

安森美半导体

Hex Buffer

The MC14049B Hex Inverter/Buffer and MC14050B Noninverting Hex Buffer are constructed with MOS P–Channel and N–Channel enhancement mode devices in a single monolithic structure. These complementary MOS devices find primary use where low power dissipation and/or high noise immunity is desired. Thes

ONSEMI

安森美半导体

Hex Buffer

The MC14049B Hex Inverter/Buffer and MC14050B Noninverting Hex Buffer are constructed with MOS P−Channel and N−Channel enhancement mode devices in a single monolithic structure. These complementary MOS devices find primary use where low power dissipation and/or high noise immunity is desired.

ONSEMI

安森美半导体

Hex Buffer

The MC14049B Hex Inverter/Buffer and MC14050B Noninverting Hex Buffer are constructed with MOS P–Channel and N–Channel enhancement mode devices in a single monolithic structure. These complementary MOS devices find primary use where low power dissipation and/or high noise immunity is desired. Thes

ONSEMI

安森美半导体

Hex Buffer

The MC14049B Hex Inverter/Buffer and MC14050B Noninverting Hex Buffer are constructed with MOS P–Channel and N–Channel enhancement mode devices in a single monolithic structure. These complementary MOS devices find primary use where low power dissipation and/or high noise immunity is desired. Thes

ONSEMI

安森美半导体

Hex Buffer

The MC14049B Hex Inverter/Buffer and MC14050B Noninverting Hex Buffer are constructed with MOS P−Channel and N−Channel enhancement mode devices in a single monolithic structure. These complementary MOS devices find primary use where low power dissipation and/or high noise immunity is desired.

ONSEMI

安森美半导体

Hex Buffer

The MC14049B Hex Inverter/Buffer and MC14050B Noninverting Hex Buffer are constructed with MOS P–Channel and N–Channel enhancement mode devices in a single monolithic structure. These complementary MOS devices find primary use where low power dissipation and/or high noise immunity is desired. Thes

ONSEMI

安森美半导体

Hex Buffer

The MC14049B Hex Inverter/Buffer and MC14050B Noninverting Hex Buffer are constructed with MOS P–Channel and N–Channel enhancement mode devices in a single monolithic structure. These complementary MOS devices find primary use where low power dissipation and/or high noise immunity is desired. Thes

ONSEMI

安森美半导体

Hex Buffer

文件:156.13 Kbytes Page:9 Pages

ONSEMI

安森美半导体

Hex Buffer

文件:148.25 Kbytes Page:9 Pages

ONSEMI

安森美半导体

Hex Buffer

文件:148.25 Kbytes Page:9 Pages

ONSEMI

安森美半导体

Hex Buffer

文件:131.31 Kbytes Page:8 Pages

ONSEMI

安森美半导体

封装/外壳:16-SOIC(0.154",3.90mm 宽) 包装:管件 描述:IC BUFFER NON-INVERT 18V 16SOIC 集成电路(IC) 缓冲器,驱动器,接收器,收发器

ONSEMI

安森美半导体

封装/外壳:16-SOIC(0.154",3.90mm 宽) 包装:管件 描述:IC BUFFER NON-INVERT 18V 16SOIC 集成电路(IC) 缓冲器,驱动器,接收器,收发器

ONSEMI

安森美半导体

Hex Buffer

文件:148.25 Kbytes Page:9 Pages

ONSEMI

安森美半导体

Hex Buffer

文件:131.31 Kbytes Page:8 Pages

ONSEMI

安森美半导体

Hex Buffer

文件:131.31 Kbytes Page:8 Pages

ONSEMI

安森美半导体

Hex Buffer

文件:148.25 Kbytes Page:9 Pages

ONSEMI

安森美半导体

Hex Buffer

文件:131.31 Kbytes Page:8 Pages

ONSEMI

安森美半导体

Hex Buffer

文件:148.25 Kbytes Page:9 Pages

ONSEMI

安森美半导体

Hex Buffer

文件:148.25 Kbytes Page:9 Pages

ONSEMI

安森美半导体

Hex Buffer

文件:131.31 Kbytes Page:8 Pages

ONSEMI

安森美半导体

替换型号 功能描述 生产厂家 企业 LOGO 操作

10W - 33KV SINGLEOUTPUT DC / DC INDUSTRIAL

POWERBOX

CMOS HEX BUFFERS/CONVERTERS

TI

德州仪器

Hex Buffers (Non-Inverting)

FAIRCHILD

仙童半导体

Hex Inverting Buffer . Hex Non-Inverting Buffer

FAIRCHILD

仙童半导体

CMOS HEX BUFFERS/CONVERTERS

TI

德州仪器

CMOS Hex Buffer/Converters

HARRIS

Hex Inverting,Non-Inverting Buffer

NSC

国半

Hex Inverting Buffer Hex Non-Inverting Buffer

FAIRCHILD

仙童半导体

Hex Inverting Buffer . Hex Non-Inverting Buffer

FAIRCHILD

仙童半导体

CMOS HEX BUFFERS/CONVERTERS

TI

德州仪器

CMOS HEX BUFFERS/CONVERTERS

TI

德州仪器

CMOS Hex Buffer/Converters

HARRIS

CMOS Hex Buffer/Converters

HARRIS

CMOS HEX BUFFERS/CONVERTERS

TI

德州仪器

Hex Buffer

HITACHIHitachi Semiconductor

日立日立公司

HEX non-inverting buffers

PHILIPS

飞利浦

HEX non-inverting buffers

PHILIPS

飞利浦

Hex non-inverting buffers

ETC

C-2MOS DIGITAL INTEGRATED CIRCUIT SILICON MONOLITHIC

ETC1

HEX BUFFER/CONVERTER (INVERTING TYPE, NON-INVERTING TYPE)

TOSHIBA

东芝

Hex Buffer/Converter

TOSHIBA

东芝

MC14050产品属性

  • 类型

    描述

  • Pb-free:

    Pb

  • AEC Qualified:

    A

  • Halide free:

    H

  • PPAP Capablee:

    P

  • Status:

    Active

  • Channels:

    6

  • Output:

    CMOS

  • VCC Min (V):

    3

  • VCC Max (V):

    18

  • tpd Max (ns):

    80

  • IO Max (mA):

    16

  • Package Type:

    SOIC-16

更新时间:2026-5-15 11:44:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
ON(安森美)
2511
标准封装
8000
电子元器件采购降本30%!原厂直采,砍掉中间差价
onsemi
25+
16-SOEIAJ
18746
样件支持,可原厂排单订货!
onsemi
25+
16-SOEIAJ
18798
正规渠道,免费送样。支持账期,BOM一站式配齐
ON
25+
SOP-16
20000
原装
ON
25+
SOP16
30000
代理全新原装现货,价格优势
ON/安森美
23+
SOP16
10000
一级代理原厂VIP渠道,专注军工、汽车、医疗、工业、
三年内
1983
只做原装正品
ON
2016+
SOP16
9000
只做原装,假一罚十,公司可开17%增值税发票!
ON Semiconductor
23+
16SOEIAJ
8000
只做原装现货
ON/安森美
23+
SOP16-5.2MM
50000
全新原装正品现货,支持订货

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