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型号 功能描述 生产厂家 企业 LOGO 操作
MC10111FN

Dual 3?묲nput/3?뭀uput NOR Gate

The MC10111 is designed to drive up to three transmission lines simul− taneously. The multiple outputs of this device also allow the wire “OR”−ing of several levels of gating for minimization of gate and package count. The ability to control three parallel lines from a single point makes the MC10

ONSEMI

安森美半导体

MC10111FN

Dual 3−Input/3−Ouput NOR Gate

ONSEMI

安森美半导体

Dual 3?묲nput/3?뭀uput NOR Gate

The MC10111 is designed to drive up to three transmission lines simul− taneously. The multiple outputs of this device also allow the wire “OR”−ing of several levels of gating for minimization of gate and package count. The ability to control three parallel lines from a single point makes the MC10

ONSEMI

安森美半导体

6 Watts, 1.5 GHz GOLDMOS Field Effect Transistor

Description The PTF 10111 is a 6 watt LDMOS FET intended for large signal amplifier applications to 1.5 GHz. It operates @ 50 efficiency and 16 dB of gain. Nitride surface passivation and full gold metallization ensure excellent device lifetime and reliability. • Performance at 1.5 GHz, 28 Volts

ERICSSON

爱立信

Current-output type sensors with variable integration time function

Current-output type sensors with variable integration time function The S10111 to S10114 series are self-scanning photodiode arrays designed speci¿cally as detectors for spectroscopy. The scanning circuit operates at low power consumption and is easy to handle. Each photodiode has a large act

HAMAMATSUHamamatsu Photonics Co.,Ltd.

滨松光子滨松光子学株式会社

SA series, high-precision,Pt-film thermal sensors.

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更新时间:2026-3-17 23:00:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
onsemi(安森美)
25+
1476
原装现货,免费供样,技术支持,原厂对接
onsemi(安森美)
25+
-
18746
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MOTOROLA
2016+
CDIP
3000
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MOT
23+
DIP-16
2680
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MOT
20+
DIP16
35830
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MOTOROLA/摩托罗拉
24+
DIP
880000
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MOT
85+
DIP
548
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MOT
25+
DIP
2987
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MOT
26+
SOP28
890000
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原厂
2540+
CDIP16
6852
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