Low Forward Volatge Drop Schottky Barrier Diodes

Features • Halogen free available upon request by adding suffix -HF • High-Surge-Capability • Super Low Forward Voltage Drop • Low-Profile-Package • Lead Free Finish/Rohs Compliant (PSuffix designates Compliant. See ordering information)

Low Forward Volatge Drop Schottky Barrier Diodes

Features • Halogen free available upon request by adding suffix -HF • High-Surge-Capability • Super Low Forward Voltage Drop • Low-Profile-Package • Lead Free Finish/Rohs Compliant (PSuffix designates Compliant. See ordering information)

肖特基二极管

Low Forward Volatge Drop Schottky Barrier Diodes

Features • Halogen free available upon request by adding suffix -HF • High-Surge-Capability • Super Low Forward Voltage Drop • Low-Profile-Package • Lead Free Finish/Rohs Compliant (PSuffix designates Compliant. See ordering information)

Low Forward Volatge Drop Schottky Barrier Diodes

Features « Super Low Forward Voltage Drop « High Current Capability, High Efficiency «High Junction Temperature Capability o Low Leakage Current ‘« RoHs Product

Low Forward Volatge Drop Schottky Barrier Diodes

文件：351.4 Kbytes Page：3 Pages

封装/外壳：SOD-123 包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 描述：DIODE SCHOTTKY 20V 1A SOD123 分立半导体产品 二极管 - 整流器 - 单

ULTRAFAST RECTIFIERS 1.0 AMPERE 200-400-600 VOLTS

SWITCHMODE™ Power Rectifiers . . . designed for use in switching power supplies, inverters and as free wheeling diodes, these state–of–the–art devices have the following features: • Ultrafast 25, 50 and 75 Nanosecond Recovery Times • 175°C Operating Junction Temperature • Low Forward Voltage

ZENER DIODES 200 mW 2 PINS SUPER MINI MOLD

DESCRIPTION Type RD2.0S to RD120S Series are 2 PIN Super Mini Mold Package zener diodes possessing an allowable power dissipation of 200 mW. FEATURES • Sharp Breakdown characteristic. • Vz: Applied E24 standard. APPLICATIONS Circuit for Constant Voltage, Constant Current, W

MOSORB ZENER OVERVOLTAGE TRANSIENT SUPPRESSORS

The SA5.0A series is designed to protect voltage sensitive components from high voltage, high energy transients. They have excellent clamping capability, high surge capability, low zener impedance and fast response time. The SA5.0A series is supplied in Motorola’s exclusive, cost-effective, highly

DARLINGTON 5 AMPERE COMPLEMENTARY SILICON POWER TRANSISTORS

Plastic Medium-Power Complementary Silicon Transistors . . . designed for general–purpose amplifier and low–speed switching applications. • High DC Current Gain — hFE = 2500 (Typ) @ IC = 4.0 Adc • Collector–Emitter Sustaining Voltage — @ 100 mAdc VCEO(sus) = 60 Vdc (Min) — TIP12

POWER TRANSISTORS(5.0A,60-100V,65W)

designed for general−purpose amplifier and low−speed switching applications. FEATURES: • Collector−Emitter Sustaining Voltage − VCEO(sus) = 60 V (Min) − TIP120, TIP125 = 80 V (Min) − TIP121, TIP126 = 100 V (Min) − TIP122, TIP127 • Low Coll