SURFACE MOUNT SCHOTTKY BA R RIER RECTIFIER

Features The plastic package carries Underwriters Laboratory Flammability Classification 94V-0 For surface mounted applications Metal silicon junction,majority carrier conduction Low power loss,high efficiency Built-in strain relief,ideal for automated placement High forward surge current c

SURFACE MOUNT SCHOTTKY BA R RIER RECTIFIER

FEATURES The plastic package carries Underwriters Laboratory Flammability Classification 94V-0 For surface mounted applications Metal silicon junction,majority carrier conduction Low power loss,high efficiency Built-in strain relief,ideal for automated placement High forward surge current c

Schottky Barrier Rectifiers

肖特基二极管

肖特基二极体

Surface Mount Schottky Power Rectifier

This device employs the Schottky Barrier principle in a large area metal−to−silicon power diode. State−of−the−art geometry features epitaxial construction with oxide passivation and metal overlay contact. Ideally suited for low voltage, high frequency rectification, or as free wheeling and pol

Surface Mount Schottky Power Rectifier

文件：52.77 Kbytes Page：4 Pages

Surface Mount Schottky Power Rectifier

文件：52.77 Kbytes Page：4 Pages

Surface Mount Schottky Power Rectifier

文件：52.77 Kbytes Page：4 Pages

Surface Mount Schottky Power Rectifier

文件：96.88 Kbytes Page：4 Pages

Surface Mount Schottky Power Rectifier

文件：102.5 Kbytes Page：4 Pages

封装/外壳：DO-214AA，SMB 包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 描述：DIODE SCHOTTKY 200V 3A SMB 分立半导体产品 二极管 - 整流器 - 单

Surface Mount Schottky Power Rectifier

文件：102.5 Kbytes Page：4 Pages

Silicon planar type

Silicon planar type For stabilization of power supply ■ Features • Mini type package (3-pin) • Allowing to achieve a high-density set • Sharp rising performance • Wide voltage range: VZ = 2.0 V to 36 V

Silicon planar type

Silicon planar type For stabilization of power supply ■ Features • Mini type package (3-pin) • Allowing to achieve a high-density set • Sharp rising performance • Wide voltage range: VZ = 2.0 V to 36 V

Silicon planar type

Silicon planar type For stabilization of power supply ■ Features • Mini type package (3-pin) • Allowing to achieve a high-density set • Sharp rising performance • Wide voltage range: VZ = 2.0 V to 36 V

DUAL TMOS POWER MOSFET 11.5 AMPERES 20 VOLTS

Medium Power Surface Mount Products TMOS Dual N-Channel Field Effect Transistors WaveFET™ devices are an advanced series of power MOSFETs which utilize Motorola’s latest MOSFET technology process to achieve the lowest possible on–resistance per silicon area. They are capable of withstanding high

1.3 關m Laser-Diode DIP Module

文件：44.39 Kbytes Page：3 Pages