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MBRF3035C

Dual Schottky Rectifiers

DESCRIPTION This center tap Schottky rectifier has been optimized for low reverse leakage at high temperature. The proprietary barrier technology allows for reliable operation up to 150 °C junction temperature. Typical applications are in switching power supplies, converters, freewheeling diodes,

VISHAYVishay Siliconix

威世威世科技公司

MBRF3035C

Plastic package has Underwriters Laboratory Flammability Classification 94V-0

文件:1.13096 Mbytes Page:3 Pages

KERSEMI

Dual Schottky Rectifiers

DESCRIPTION This center tap Schottky rectifier has been optimized for low reverse leakage at high temperature. The proprietary barrier technology allows for reliable operation up to 150 °C junction temperature. Typical applications are in switching power supplies, converters, freewheeling diodes,

VISHAYVishay Siliconix

威世威世科技公司

MBRF3035CT /MBRF3040CT /MBRF3045CT SCHOTTKY RECTIFIER

Features 150C TJ operation Center tap configuration Low forward voltage drop High purity, high temperature epoxy encapsulation for enhanced mechanical strength and moisture resistance High frequency operation Guard ring for enhanced ruggedness and long term reliability This is a Pb − Fre

SMCDIODE

桑德斯微电子

Dual Common-Cathode Schottky Rectifier

DESCRIPTION This center tap Schottky rectifier has been optimized for low reverse leakage at high temperature. The proprietary barrier technology allows for reliable operation up to 150 °C junction temperature. Typical applications are in switching power supplies, converters, freewheeling diode

VISHAYVishay Siliconix

威世威世科技公司

Isolated 30.0 AMPS. Schottky Barrier Rectifiers

FEATURES - Low power loss, high efficiency - Guardring for overvoltage protection - High surge current capability - UL Recognized File # E-326243 - Compliant to RoHS Directive 2011/65/EU and in accordance to WEEE 2002/96/EC - Halogen-free according to IEC 61249-2-21 definition

TSC

台湾半导体

Dual Schottky Barrier Rectifiers

Dual Schottky Barrier Rectifiers FEATURES Reverse voltage 35 to 45 V Forward current 3.0 A Plastic package has Underwriters Laboratory Flammability Classification 94V-0 Dual rectifier construction, positive center tap „ Metal silicon junction, majority carrier conducti

SSC

Silicon Standard Corp.

TO-220F Plastic-Encapsulate Diodes

SCHOTTKY BARRIER RECTIFIER FEATURES ● Schottky Barrier Chip ● Guard Ring Die Construction for Transient Protection ● Low Power Loss,High Efficiency ● High Surge Capability ● High Current Capability and Low Forward Voltage Drop ● For Use in Low Voltage, High Frequency Inverters,Free Wheeling

TGS

Schottky Barrier Rectifiers

VOLTAGE RANGE: 30 - 100 V CURRENT: 30 A Features ◇ High surge capacity. ◇ For use in low voltage, high frequency inverters, free wheeling, and polarity protection applications. ◇ Metal silicon junction, majority carrier conduction. ◇ High current capacity, low forward voltage drop. ◇ Gua

LUGUANG

鲁光电子

SCHOTTKY RECTIFIER

Features: • 150 ℃TJ operation • Center tap configuration • Low forward voltage drop • High purity, high temperature epoxy encapsulation for enhanced mechanical strength and moisture resistance • High frequency operation • Guard ring for enhanced ruggedness and long term reliability • Th

SMC

桑德斯微电子

SCHOTTKY BARRIER RECTIFIERS

VOLTAGE RANGE: 30 - 100 V CURRENT: 30 A FEATURES ◇ High surge capacity. ◇ For use in low voltage, high frequency inverters, free wheeling, and polarity protection applications. ◇ Metal silicon junction, majority carrier conduction. ◇ High current capacity, low forward voltage drop. ◇ Gua

DSK

30.0 Amperes Insulated Dual Common Anode Schottky Half Bridge Rectifiers

Features ◆ Standard MBR matured technology with high reliablity ◆ Low forward voltage drop ◆ High current capability ◆ Low reverse leakage current ◆ High surge current capability Application ◆ Automotive Inverters and Solar Inverters ◆ Plating Power Supply,SMPS,EPS and UPS ◆ Car Audio Amp

THINKISEMI

思祁半导体

30.0 AMPS. Isolated Schottky Barrier Rectifiers

文件:259.38 Kbytes Page:3 Pages

TSC

台湾半导体

Dual Common Cathode Schottky Rectifier

文件:231.33 Kbytes Page:4 Pages

TSC

台湾半导体

30.0 AMPS. Isolated Schottky Barrier Rectifiers

文件:180.55 Kbytes Page:2 Pages

TSC

台湾半导体

Dual Schottky Barrier Rectifiers

文件:117.09 Kbytes Page:3 Pages

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体公司

Plastic package has Underwriters Laboratory Flammability Classification 94V-0

文件:1.13096 Mbytes Page:3 Pages

KERSEMI

30A, 35V, Schottky Rectifier

TSC

台湾半导体

30.0 AMPS. Isolated Schottky Barrier Rectifiers

文件:180.55 Kbytes Page:2 Pages

TSC

台湾半导体

30.0 AMPS. Isolated Schottky Barrier Rectifiers

文件:259.38 Kbytes Page:3 Pages

TSC

台湾半导体

Dual Common Cathode Schottky Rectifier

文件:231.33 Kbytes Page:4 Pages

TSC

台湾半导体

DIODE ARRAY SCHOTTKY 35V ITO220

VISHAYVishay Siliconix

威世威世科技公司

封装/外壳:TO-220-3 全封装,隔离接片 包装:管件 描述:DIODE ARRAY SCHOTTKY 35V ITO220 分立半导体产品 二极管 - 整流器 - 阵列

ETC

知名厂家

封装/外壳:TO-220-3 全封装,隔离接片 包装:管件 描述:DIODE ARRAY SCHOTT 35V ITO220AB 分立半导体产品 二极管 - 整流器 - 阵列

TSC

台湾半导体

DIODE ARRAY SCHOTTKY 35V ITO220

VISHAYVishay Siliconix

威世威世科技公司

Phototransistor Detector

Description: The NTE3035A is designed for a wide variety of industrial processing and control applications requiring a sensitive detector. The NTE3034A is is an identical package and is designed to be used with the NTE3029A infrared emitter. Features: ● Miniature, Low Profile, Clear Pla

NTE

Phototransistor Detector

Description: The NTE3035A is designed for a wide variety of industrial processing and control applications requiring a sensitive detector. The NTE3034A is is an identical package and is designed to be used with the NTE3029A infrared emitter. Features: ● Miniature, Low Profile, Clear Pla

NTE

Rectifier diodes schottky barrier

GENERAL DESCRIPTION Dual, low leakage, platinum barrier, schottky rectifier diodes in a plastic envelope featuring low forward voltage drop and absence of stored charge. These devices can withstand reverse voltage transients and have guaranteed reverse surge capability. The devices are intended

PHILIPS

飞利浦

Rectifier diodes schottky barrier

GENERAL DESCRIPTION Dual, low leakage, platinum barrier, schottky barrier rectifier diodes in a full pack, plastic envelope featuring low forward voltage drop and absence of stored charge. These devices can withstand reverse voltage transients and have guaranteed reverse surge capability. The d

PHILIPS

飞利浦

SCHOTTKY BARRIER RECTIFIER (VOLTAGE RANGE 20 to 60 Volts CURRENT 30 Amperes)

文件:26.18 Kbytes Page:2 Pages

RECTRON

丽正

MBRF3035C产品属性

  • 类型

    描述

  • 二极管类型:

    肖特基

  • 电压 - DC 反向(Vr)(最大值):

    35V

  • 电流 - 平均整流(Io)(每二极管):

    15A

  • 不同 If 时的电压 - 正向(Vf:

    600mV @ 20A

  • 速度:

    快速恢复 = 200mA(Io)

  • 不同 Vr 时的电流 - 反向漏电流:

    1mA @ 35V

  • 工作温度 - 结:

    -65°C ~ 150°C

  • 安装类型:

    通孔

  • 封装/外壳:

    TO-220-3 全封装,隔离接片

  • 供应商器件封装:

    ITO-220AB

更新时间:2026-8-2 13:01:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
ON
23+
SOD123
12000
全新原装正品现货,支持订货
ON(安森美)
2511
9550
电子元器件采购降本30%!原厂直采,砍掉中间差价
VISHAY/威世
23+
ITO220AB
13000
原厂授权一级代理,专业海外优势订货,价格优势、品种
TSC
2447
TO-220F
100500
一级代理专营品牌!原装正品,优势现货,长期排单到货
TSC/台湾半导体
23+
TO-220F
50000
全新原装正品现货,支持订货
Vishay Semiconductor Diodes Di
22+
ITO220AB
9000
原厂渠道,现货配单
24+
3000
公司现货
ON
23+
SOD123
12000
正规渠道,只有原装!
TI
25+
SOP8
10933
ON/安森美
22+
DO-219AB
20000
公司只有原装 品质保障

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