Dual High-Voltage Schottky Rectifiers

Features • Plastic package has Underwriters Laboratory Flammability Classification 94V-0 • Dual rectifier construction, positive center tap • Metal silicon junction, majority carrier conduction • Low power loss, high efficiency • Guardring for overvoltage protection • For use in low voltage,

Dual Common-Cathode High-Voltage Schottky Rectifier

Features • Plastic package has Underwriters Laboratory Flammability Classification 94V-0 • Dual rectifier construction, positive center tap • Metal silicon junction, majority carrier conduction • Low power loss, high efficiency • Guardring for overvoltage protection • For use in low voltage,

Dual High-Voltage Trench MOS Barrier Schottky Rectifier

FEATURES • Trench MOS Schottky technology • Low power losses, high efficiency • Low forward voltage drop • High forward surge capability • High frequency operation • Solder bath temperature 275 °C max. 10 s, per JESD 22-B106 • Material categorization: for definitions of compliance please s

Isolated 20.0 AMPS. Schottky Barrier Rectifiers

Features ◇ UL Recognized File # E-326243 ◇ Low power loss, high efficiency ◇ High current capability, low forward voltage drop ◇ Guard-ring for overvoltage protection ◇ Plastic material used carriers Underwriters Laboratory Classification 94V-0 ◇ Green compound with suffix G on packing code

DUAL SCHOTTKY RECTIFIERS

VOLTAGE RANGE: 70 - 100 V CURRENT: 20 A FEATURES ◇ Metal silicon junction, majority carrier conduction. ◇ Guard ring for over voltage protection. ◇ High surge capacity. ◇ For use in low voltage, high frequencyinverters, free wheeling, and polarityprotection applications. ◇ High current capa

Dual High-Voltage Schottky Barrier Rectifiers

FEATURES Plastic package has Underwriters Laboratory Flammability Classification 94V-0 Dual rectifier construction, positive center tap Metal silicon junction, majority carrier conduction Low power loss, high efficiency Guardring for overvoltage protection For use in

SCHOTTKY BARRIER RECTIFIER

Reverse Voltage - 20 to 100 Volts Forward Current - 20.0 Amperes FEATURES ♦ High surge capacity. ♦ For use in low voltage, high frequency inverters,free wheeling,and polarity protection applications. ♦ Metal silicon junction,majority carrier conduction. ♦ High current capability,low forward v

DUAL SCHOTTKY RECTIFIERS

VOLTAGE RANGE: 70 - 100 V CURRENT: 20 A FEATURES ◇ High surge capacity. ◇ For use in low voltage, high frequencyinverters, free wheeling, and polarityprotection applications. ◇ Metal silicon junction, majority carrier conduction. ◇ High current capacity, low forward voltage drop. ◇ Guard rin

Dual SchottkyBarrierRectifiers ReverseVoltage 100V Volts ForwardCurrent 20.0Amperes

egatloVesreveR 100V Volts serepmA0.02tnerruCdrawroF Features ◆ Plastic package has Underwriters Laboratory Flammability Classification 94V-0 ◆ Dual rectifier construction, positive center tap ◆ Metal silicon junction, majority carrier conduction ◆ Low power loss, high efficiency ◆ Guardr

Dual High-Voltage Trench MOS Barrier Schottky Rectifier

Trench MOS Schottky technology\nLow power losses, high efficiency\nLow forward voltage drop;

Dual Common-Cathode High-Voltage Schottky Rectifier

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Plastic material used carries Underwriters Laboratory Classifications 94V-0

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20.0 AMPS. Isolated Schottky Barrier Rectifiers

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Dual Common Cathode Schottky Rectifier

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Dual Common-Cathode High-Voltage Schottky Rectifier

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Dual High-Voltage Trench MOS Barrier Schottky Rectifier

FEATURES • Trench MOS Schottky technology • Low power losses, high efficiency • Low forward voltage drop • High forward surge capability • High frequency operation • Solder bath temperature 275 °C max. 10 s, per JESD 22-B106 • Material categorization: for definitions of compliance please s

20 AMPERES SCHOTTKY BARRIER RECTIFIERS

FEATURES • Plastic package has Underwriters Laboratory Flammability Classification 94V-0. Flame Retardant Epoxy Molding Compound. • Metal silicon junction, majority carrier conduction • Low power loss, high efficiency. • High current capability • For use in low voltage, high frequen

Dual Common-Cathode High Voltage Trench MOS Barrier Schottky Rectifier

Trench MOS Schottky technology\nLower power losses, high efficiency\nLow forward voltage drop;

Dual Common-Cathode High-Voltage Schottky Rectifier

文件：78.98 Kbytes Page：4 Pages

封装/外壳：TO-220-3 全封装，隔离接片 包装：卷带（TR） 描述：DIODE ARRAY SCHOTTKY 90V ITO220 分立半导体产品 二极管 - 整流器 - 阵列

封装/外壳：TO-220-3 全封装，隔离接片 包装：管件 描述：DIODE ARRAY SCHOTT 90V ITO220AB 分立半导体产品 二极管 - 整流器 - 阵列

12-bit, serial IN, parallel OUT driver

The BU2090, BU2090F, BU2090FS, BU2092, BU2092F, and BU2092FV are 12-bit serial input, parallel output drivers. For the BU2090 / F / FS, data input is shifted to the 12-bit internal shift register on the rising edge of a clock pulse. On the falling edge of the pulse, if the DATA pin is HIGH, the

12-24GHz Frequency Multiplier

Description The CHX2090 is a cascadable by 2 frequency multiplier monolithic circuit. It is designed for a wide range of applications, from military to commercial communication systems. The backside of the chip is both RF and DC grounds. This helps simplify the assembly process. The circuit is m

12-24GHz Frequency Multiplier

Description The monolithic microwave IC (MMIC) in the package is a cascadable by 2 frequency multiplier. It is designed for a wide range of applications, from military to commercial communication systems. The circuit is manufactured with a PM-HEMT process, 0.25µm gate length, via holes through th

SWITCHMODE??Power Rectifiers

SWITCHMODE™ Power Rectifiers . . . using the Schottky Barrier principle with a platinum barrier metal. These state–of–the–art devices have the following features: • 20 Amps Total (10 Amps Per Diode Leg) • Guard–Ring for Stress Protection • Low Forward Voltage • 150°C Operating Junction Temper

Integrated Circuit 7-Channel Transistor Array

Description: The NTE2090 is an integrated circuit in a 16–Lead DIP type package comprised of six NPN low saturation drivers. All units feature integral clamp diodes for switching inductive loads and protective diodes for protection against a negative input voltage. Features: • Low Saturation